TY - GEN
T1 - High Electric Field Conduction of Polymers at Ambient and Elevated Temperatures
AU - Wu, Chao
AU - Li, Zongze
AU - Chen, Lihua
AU - Deshmukh, Ajinkya
AU - Wang, Yifei
AU - Ramprasad, Rampi
AU - Sotzing, Gregory A.
AU - Cao, Yang
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/10
Y1 - 2019/10
N2 - The next generation electrical-power and electronic systems with wide band gap semiconductors require thin dielectric films operating under the extreme electric field at elevated temperatures. Here we investigated the conduction properties under high electric field up to 450 MV/m for biaxially oriented polypropylene (BOPP), which is the state-of-the-art commercially available polymer for capacitive applications, as well as three high-temperature polymers poly(ether ether ketone)(PEEK), poly(etherimide)(Ultem) and polyimide(Kapton). Further analysis was performed based on the hopping conduction mechanism. At elevated temperature, the increased thermally-assisted excitation energy gave rise to an increase of the hopping distance. It is argued that the large band gap provided a higher energy barrier to the charge hopping. If the band gap is large enough, the tunneling process dominated the charge transport, i.e., the case of BOPP. For high-temperature applications, both the thermal stability and large band gap are required in order to suppress the temperature and electric field dependent conduction.
AB - The next generation electrical-power and electronic systems with wide band gap semiconductors require thin dielectric films operating under the extreme electric field at elevated temperatures. Here we investigated the conduction properties under high electric field up to 450 MV/m for biaxially oriented polypropylene (BOPP), which is the state-of-the-art commercially available polymer for capacitive applications, as well as three high-temperature polymers poly(ether ether ketone)(PEEK), poly(etherimide)(Ultem) and polyimide(Kapton). Further analysis was performed based on the hopping conduction mechanism. At elevated temperature, the increased thermally-assisted excitation energy gave rise to an increase of the hopping distance. It is argued that the large band gap provided a higher energy barrier to the charge hopping. If the band gap is large enough, the tunneling process dominated the charge transport, i.e., the case of BOPP. For high-temperature applications, both the thermal stability and large band gap are required in order to suppress the temperature and electric field dependent conduction.
UR - https://www.scopus.com/pages/publications/85081658163
U2 - 10.1109/CEIDP47102.2019.9009941
DO - 10.1109/CEIDP47102.2019.9009941
M3 - 会议稿件
AN - SCOPUS:85081658163
T3 - Annual Report - Conference on Electrical Insulation and Dielectric Phenomena, CEIDP
SP - 486
EP - 489
BT - 2019 IEEE Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2019 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 IEEE Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2019
Y2 - 20 October 2019 through 23 October 2019
ER -