HfAlOx/Al2O3 Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond

Minghui Zhang; Fang Lin; Wei Wang; Feng Wen; Genqiang Chen; Shi He; Yanfeng Wang; Shuwei Fan; Renan Bu; Hongxing Wang

doi:10.3390/ma15020446

HfAlO_x/Al₂O₃ Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond

Minghui Zhang
, Fang Lin
, Wei Wang
, Feng Wen
, Genqiang Chen
, Shi He
, Yanfeng Wang
, Shuwei Fan
, Renan Bu
, Hongxing Wang

电子与信息学部

Xi'an Jiaotong University

科研成果: 期刊稿件 › 文章 › 同行评审

3 引用（Scopus）

摘要

In this work, a hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with HfAlO_x/Al₂O₃ bilayer dielectrics is fabricated and characterized. The HfAlO_x/Al₂O₃ bilayer dielectrics are deposited by the atomic layer deposition (ALD) technique, which can protect the H-terminated diamond two-dimensional hole gas (2DHG) channel. The device demonstrates normally-on characteristics, whose threshold voltage (V_TH) is 8.3 V. The maximum drain source current density (I_DSmax), transconductance (G_m), capacitance (C_OX) and carrier density (ρ) are −6.3 mA/mm, 0.73 mS/mm, 0.22 µF/cm² and 1.53 × 10¹³ cm⁻², respectively.

源语言	英语
文章编号	446
期刊	Materials
卷	15
期	2
DOI	https://doi.org/10.3390/ma15020446
出版状态	已出版 - 1 1月 2022

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10.3390/ma15020446

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引用此

@article{d441864f3abc4a16923175a674672e52,

title = "HfAlOx/Al2O3 Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond",

abstract = "In this work, a hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with HfAlOx/Al2O3 bilayer dielectrics is fabricated and characterized. The HfAlOx/Al2O3 bilayer dielectrics are deposited by the atomic layer deposition (ALD) technique, which can protect the H-terminated diamond two-dimensional hole gas (2DHG) channel. The device demonstrates normally-on characteristics, whose threshold voltage (VTH) is 8.3 V. The maximum drain source current density (IDSmax), transconductance (Gm), capacitance (COX) and carrier density (ρ) are −6.3 mA/mm, 0.73 mS/mm, 0.22 µF/cm2 and 1.53 × 1013 cm−2, respectively.",

keywords = "Field effect transistor, HfAlO, Hydrogen-terminated diamond",

author = "Minghui Zhang and Fang Lin and Wei Wang and Feng Wen and Genqiang Chen and Shi He and Yanfeng Wang and Shuwei Fan and Renan Bu and Hongxing Wang",

note = "Publisher Copyright: {\textcopyright} 2022 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2022",

month = jan,

day = "1",

doi = "10.3390/ma15020446",

language = "英语",

volume = "15",

journal = "Materials",

issn = "1996-1944",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "2",

}

TY - JOUR

T1 - HfAlOx/Al2O3 Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond

AU - Zhang, Minghui

AU - Lin, Fang

AU - Wang, Wei

AU - Wen, Feng

AU - Chen, Genqiang

AU - He, Shi

AU - Wang, Yanfeng

AU - Fan, Shuwei

AU - Bu, Renan

AU - Wang, Hongxing

PY - 2022/1/1

Y1 - 2022/1/1

N2 - In this work, a hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with HfAlOx/Al2O3 bilayer dielectrics is fabricated and characterized. The HfAlOx/Al2O3 bilayer dielectrics are deposited by the atomic layer deposition (ALD) technique, which can protect the H-terminated diamond two-dimensional hole gas (2DHG) channel. The device demonstrates normally-on characteristics, whose threshold voltage (VTH) is 8.3 V. The maximum drain source current density (IDSmax), transconductance (Gm), capacitance (COX) and carrier density (ρ) are −6.3 mA/mm, 0.73 mS/mm, 0.22 µF/cm2 and 1.53 × 1013 cm−2, respectively.

AB - In this work, a hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with HfAlOx/Al2O3 bilayer dielectrics is fabricated and characterized. The HfAlOx/Al2O3 bilayer dielectrics are deposited by the atomic layer deposition (ALD) technique, which can protect the H-terminated diamond two-dimensional hole gas (2DHG) channel. The device demonstrates normally-on characteristics, whose threshold voltage (VTH) is 8.3 V. The maximum drain source current density (IDSmax), transconductance (Gm), capacitance (COX) and carrier density (ρ) are −6.3 mA/mm, 0.73 mS/mm, 0.22 µF/cm2 and 1.53 × 1013 cm−2, respectively.

KW - Field effect transistor

KW - HfAlO

KW - Hydrogen-terminated diamond

UR - https://www.scopus.com/pages/publications/85122281175

U2 - 10.3390/ma15020446

DO - 10.3390/ma15020446

M3 - 文章

AN - SCOPUS:85122281175

SN - 1996-1944

VL - 15

JO - Materials

JF - Materials

IS - 2

M1 - 446

ER -

HfAlOx/Al2O3 Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond

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HfAlO_x/Al₂O₃ Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond