GSMBE growth and PL investigation of lattice-matched InGaAs/InP quantum wells

Wang Xiaoliang; Sun Dianzhao; Kong Meiying; Hou Xun; Zeng Yiping

doi:10.1016/0022-0248(95)01028-9

GSMBE growth and PL investigation of lattice-matched InGaAs/InP quantum wells

Wang Xiaoliang
, Sun Dianzhao
, Kong Meiying
, Hou Xun
, Zeng Yiping

电子与信息学部

科研成果: 期刊稿件 › 文章 › 同行评审

4 引用（Scopus）

摘要

Using a home-made gas-source molecular beam epitaxy system, high quality InGaAs quantum wells with different well widths lattice-matched to a (001) InP substrate have been obtained. Sharp and intense peaks for each well can be well resolved in the PL spectra for the sample. For well widths larger than ∼ 60 Å, the exciton energies are in good agreement with those of calculation. For wells narrower than 40 Å, our line widths are below the theoretical values of line width broadening due to one monolayer interface fluctuation, showing that the interface fluctuation of our sample is within one monolayer.

源语言	英语
页（从-至）	281-284
页数	4
期刊	Journal of Crystal Growth
卷	164
期	1-4
DOI	https://doi.org/10.1016/0022-0248(95)01028-9
出版状态	已出版 - 7月 1996

访问文件

10.1016/0022-0248(95)01028-9

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{ff187a2fa8964e5e863f5803362f362f,

title = "GSMBE growth and PL investigation of lattice-matched InGaAs/InP quantum wells",

abstract = "Using a home-made gas-source molecular beam epitaxy system, high quality InGaAs quantum wells with different well widths lattice-matched to a (001) InP substrate have been obtained. Sharp and intense peaks for each well can be well resolved in the PL spectra for the sample. For well widths larger than ∼ 60 {\AA}, the exciton energies are in good agreement with those of calculation. For wells narrower than 40 {\AA}, our line widths are below the theoretical values of line width broadening due to one monolayer interface fluctuation, showing that the interface fluctuation of our sample is within one monolayer.",

author = "Wang Xiaoliang and Sun Dianzhao and Kong Meiying and Hou Xun and Zeng Yiping",

year = "1996",

month = jul,

doi = "10.1016/0022-0248(95)01028-9",

language = "英语",

volume = "164",

pages = "281--284",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - GSMBE growth and PL investigation of lattice-matched InGaAs/InP quantum wells

AU - Xiaoliang, Wang

AU - Dianzhao, Sun

AU - Meiying, Kong

AU - Xun, Hou

AU - Yiping, Zeng

PY - 1996/7

Y1 - 1996/7

N2 - Using a home-made gas-source molecular beam epitaxy system, high quality InGaAs quantum wells with different well widths lattice-matched to a (001) InP substrate have been obtained. Sharp and intense peaks for each well can be well resolved in the PL spectra for the sample. For well widths larger than ∼ 60 Å, the exciton energies are in good agreement with those of calculation. For wells narrower than 40 Å, our line widths are below the theoretical values of line width broadening due to one monolayer interface fluctuation, showing that the interface fluctuation of our sample is within one monolayer.

AB - Using a home-made gas-source molecular beam epitaxy system, high quality InGaAs quantum wells with different well widths lattice-matched to a (001) InP substrate have been obtained. Sharp and intense peaks for each well can be well resolved in the PL spectra for the sample. For well widths larger than ∼ 60 Å, the exciton energies are in good agreement with those of calculation. For wells narrower than 40 Å, our line widths are below the theoretical values of line width broadening due to one monolayer interface fluctuation, showing that the interface fluctuation of our sample is within one monolayer.

UR - https://www.scopus.com/pages/publications/0030190557

U2 - 10.1016/0022-0248(95)01028-9

DO - 10.1016/0022-0248(95)01028-9

M3 - 文章

AN - SCOPUS:0030190557

SN - 0022-0248

VL - 164

SP - 281

EP - 284

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

GSMBE growth and PL investigation of lattice-matched InGaAs/InP quantum wells

摘要

访问文件

其它文件与链接

学术指纹

引用此