GSMBE growth and DCXRD study on InxGa1-xAs/InP strained-layer MQWs in P-i-N configuration

Xiaoliang Wang; Dianzhao Sun; Meiying Kong; Xun Hou; Yiping Zeng

GSMBE growth and DCXRD study on In_xGa_1-xAs/InP strained-layer MQWs in P-i-N configuration

Xiaoliang Wang
, Dianzhao Sun
, Meiying Kong
, Xun Hou
, Yiping Zeng

CAS - Institute of Semiconductors

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

A series of high quality In_xGa_1-xAs/InP strained-layer multiquantum wells (MQW) in a P-i-N configuration with x varying from 0.39 to 0.68 were made using the home made GSMBE system. Double crystal X-ray diffraction (DCXRD) patterns and their computer simulation were used to determine the structural parameters and indium composition in the well of the samples. The results show that the samples are of high quality and the growth process can be well controlled.

源语言	英语
页（从-至）	502-507
页数	6
期刊	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
卷	18
期	7
出版状态	已出版 - 7月 1997
已对外发布	是

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title = "GSMBE growth and DCXRD study on InxGa1-xAs/InP strained-layer MQWs in P-i-N configuration",

abstract = "A series of high quality InxGa1-xAs/InP strained-layer multiquantum wells (MQW) in a P-i-N configuration with x varying from 0.39 to 0.68 were made using the home made GSMBE system. Double crystal X-ray diffraction (DCXRD) patterns and their computer simulation were used to determine the structural parameters and indium composition in the well of the samples. The results show that the samples are of high quality and the growth process can be well controlled.",

author = "Xiaoliang Wang and Dianzhao Sun and Meiying Kong and Xun Hou and Yiping Zeng",

year = "1997",

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T1 - GSMBE growth and DCXRD study on InxGa1-xAs/InP strained-layer MQWs in P-i-N configuration

AU - Wang, Xiaoliang

AU - Sun, Dianzhao

AU - Kong, Meiying

AU - Hou, Xun

AU - Zeng, Yiping

PY - 1997/7

Y1 - 1997/7

N2 - A series of high quality InxGa1-xAs/InP strained-layer multiquantum wells (MQW) in a P-i-N configuration with x varying from 0.39 to 0.68 were made using the home made GSMBE system. Double crystal X-ray diffraction (DCXRD) patterns and their computer simulation were used to determine the structural parameters and indium composition in the well of the samples. The results show that the samples are of high quality and the growth process can be well controlled.

AB - A series of high quality InxGa1-xAs/InP strained-layer multiquantum wells (MQW) in a P-i-N configuration with x varying from 0.39 to 0.68 were made using the home made GSMBE system. Double crystal X-ray diffraction (DCXRD) patterns and their computer simulation were used to determine the structural parameters and indium composition in the well of the samples. The results show that the samples are of high quality and the growth process can be well controlled.

UR - https://www.scopus.com/pages/publications/0031175877

M3 - 文章

AN - SCOPUS:0031175877

SN - 0253-4177

VL - 18

SP - 502

EP - 507

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 7

ER -

GSMBE growth and DCXRD study on InxGa1-xAs/InP strained-layer MQWs in P-i-N configuration

摘要

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GSMBE growth and DCXRD study on In_xGa_1-xAs/InP strained-layer MQWs in P-i-N configuration