GSMBE growth and characterization of In_xGa_1-xAs/InP strained-layer MQWs in a P-i-N configuration

In_xGa_1-xAs/InP (0.39 ≤ × ≤ 0.68) strained-layer quantum wells having 20 wells with thickness of 50 Å in a P-i-N configuration were grown by gas source molecular beam epitaxy (GSMBE). High-resolution X-ray diffraction rocking curves show the presence of up to seven orders of sharp and intense satellite reflection, indicative of the structural perfection of the samples. Low-temperature photoluminescence and low-temperature absorption spectra were used to determine the exciton transition energies as a function of strain. Good agreement is achieved between exciton transition energies obtained experimentally at low temperature with those calculated using the deformation potential theory.