GSMBE growth and characterization of In0.53Ga0.47As/InP quantum wells

Xiaoliang Wang; Dianzhao Sun; Meiying Kong; Xun Hou; Yiping Zheng

GSMBE growth and characterization of In_0.53Ga_0.47As/InP quantum wells

Xiaoliang Wang
, Dianzhao Sun
, Meiying Kong
, Xun Hou
, Yiping Zheng

CAS - Institute of Semiconductors

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

By using a home-made GSMBE system, high quality In_0.53Ga_0.47As/InP quantum wells having different well widths (1-18nm) and lattice-matched to (001) InP substrate were achieved. Sharp and intense photoluminescence (PL) peaks for each well can well resolved in the 10K PL spectra. For wells larger than 6nm, the exciton energies are in good agreement with those of calculation. For wells narrower than 4nm, the line widths at 10K are bellow the theoretical values of line width broadening due to one monolayer interface fluctuation, showing that the interface fluctuation of our sample is within one monolayer.

源语言	英语
页（从-至）	401-407
页数	7
期刊	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
卷	18
期	7
出版状态	已出版 - 7月 1997
已对外发布	是

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@article{6537ed5c8f7e45448fcfb33794151e56,

title = "GSMBE growth and characterization of In0.53Ga0.47As/InP quantum wells",

abstract = "By using a home-made GSMBE system, high quality In0.53Ga0.47As/InP quantum wells having different well widths (1-18nm) and lattice-matched to (001) InP substrate were achieved. Sharp and intense photoluminescence (PL) peaks for each well can well resolved in the 10K PL spectra. For wells larger than 6nm, the exciton energies are in good agreement with those of calculation. For wells narrower than 4nm, the line widths at 10K are bellow the theoretical values of line width broadening due to one monolayer interface fluctuation, showing that the interface fluctuation of our sample is within one monolayer.",

author = "Xiaoliang Wang and Dianzhao Sun and Meiying Kong and Xun Hou and Yiping Zheng",

year = "1997",

month = jul,

language = "英语",

volume = "18",

pages = "401--407",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

issn = "0253-4177",

publisher = "Kexue Chubaneshe/Science Press",

number = "7",

}

TY - JOUR

T1 - GSMBE growth and characterization of In0.53Ga0.47As/InP quantum wells

AU - Wang, Xiaoliang

AU - Sun, Dianzhao

AU - Kong, Meiying

AU - Hou, Xun

AU - Zheng, Yiping

PY - 1997/7

Y1 - 1997/7

N2 - By using a home-made GSMBE system, high quality In0.53Ga0.47As/InP quantum wells having different well widths (1-18nm) and lattice-matched to (001) InP substrate were achieved. Sharp and intense photoluminescence (PL) peaks for each well can well resolved in the 10K PL spectra. For wells larger than 6nm, the exciton energies are in good agreement with those of calculation. For wells narrower than 4nm, the line widths at 10K are bellow the theoretical values of line width broadening due to one monolayer interface fluctuation, showing that the interface fluctuation of our sample is within one monolayer.

AB - By using a home-made GSMBE system, high quality In0.53Ga0.47As/InP quantum wells having different well widths (1-18nm) and lattice-matched to (001) InP substrate were achieved. Sharp and intense photoluminescence (PL) peaks for each well can well resolved in the 10K PL spectra. For wells larger than 6nm, the exciton energies are in good agreement with those of calculation. For wells narrower than 4nm, the line widths at 10K are bellow the theoretical values of line width broadening due to one monolayer interface fluctuation, showing that the interface fluctuation of our sample is within one monolayer.

UR - https://www.scopus.com/pages/publications/0031177502

M3 - 文章

AN - SCOPUS:0031177502

SN - 0253-4177

VL - 18

SP - 401

EP - 407

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 7

ER -

GSMBE growth and characterization of In0.53Ga0.47As/InP quantum wells

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GSMBE growth and characterization of In_0.53Ga_0.47As/InP quantum wells