Growth characteristics and properties of Ga₂O₃ films fabricated by atomic layer deposition technique

Ga₂O₃ is an ultrawide-band-gap semiconductor with excellent physical properties and promising applications in electronics and photoelectronics. Atomic layer deposition (ALD) is commonly used to fabricate Ga₂O₃ films with accurate thickness control and high uniformity in both thickness and composition. A comprehensive review of growth characteristics and properties of ALD-deposited Ga₂O₃ films are presented in this study. Firstly, the reactivity between different Ga and O precursors are introduced clearly. Then, the characterization methods and the influences of the growth parameters on the growth rate, crystal structure, element composition, surface roughness, optical bandgap, and refractive index of ALD-deposited Ga₂O₃ films are summarized in detail. The related problems to be urgently solved are pointed out at the end. The study is beneficial for modulating the material characteristics and improving the application properties of Ga₂O₃ films via the ALD method.