TY - JOUR
T1 - Growth behavior and RF/microwave properties of low temperature spin-sprayed NiZn ferrite
AU - Wang, Xinjun
AU - Zhou, Ziyao
AU - Behugn, Shawn
AU - Liu, Ming
AU - Lin, Hwaider
AU - Yang, Xi
AU - Gao, Yuan
AU - Nan, Tianxiang
AU - Xing, Xing
AU - Hu, Zhongqiang
AU - Sun, Nianxiang
N1 - Publisher Copyright:
© 2014, Springer Science+Business Media New York.
PY - 2015/3
Y1 - 2015/3
N2 - In our experiment, the influence of growth parameters of the spin-spray technique upon the microstructure and magnetic/microwave properties of NiZn spinel ferrite thin film was studied. By varying the pH value of precursor and oxidizer, the microstructure of NiZn ferrite thin film can be manipulated, further, bringing varying magnetic/microwave properties. High permeability μr′ > 200 at 0.5 GHz with low loss tanδm ~0.027 at 3–5 GHz range was achieved at precursor pH value of 4.6 and oxidizer pH value of 9.6. These magnetic/microwave properties are ideal for GHz range microwave application, for example, inductors, antennas, and electromagnetic interference suppression.
AB - In our experiment, the influence of growth parameters of the spin-spray technique upon the microstructure and magnetic/microwave properties of NiZn spinel ferrite thin film was studied. By varying the pH value of precursor and oxidizer, the microstructure of NiZn ferrite thin film can be manipulated, further, bringing varying magnetic/microwave properties. High permeability μr′ > 200 at 0.5 GHz with low loss tanδm ~0.027 at 3–5 GHz range was achieved at precursor pH value of 4.6 and oxidizer pH value of 9.6. These magnetic/microwave properties are ideal for GHz range microwave application, for example, inductors, antennas, and electromagnetic interference suppression.
UR - https://www.scopus.com/pages/publications/84923364512
U2 - 10.1007/s10854-014-2625-4
DO - 10.1007/s10854-014-2625-4
M3 - 文章
AN - SCOPUS:84923364512
SN - 0957-4522
VL - 26
SP - 1890
EP - 1894
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 3
ER -