摘要
High quality ZnO films have been successfully grown on (0001) sapphire substrate at low temperatures by laser molecular beam epitaxy (L-MBE). The ZnO ceramic target with a purity better than 99.99%, prepared in the clean environment, was ablated by KrF laser in ultra high vacuum. The as-grown film, characterized with X-ray diffraction (XRD), shows highly C-axis orientated wurtzite structure. High transmittance at the absorption edge was also observed. L-MBE growth mechanism of the ZnO film was tentatively discussed.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 420-423 |
| 页数 | 4 |
| 期刊 | Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology |
| 卷 | 24 |
| 期 | 6 |
| 出版状态 | 已出版 - 12月 2004 |
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