TY - JOUR
T1 - Graphene heat dissipation film for thermal management of hot spot in electronic device
AU - Li, Xin
AU - Fang, Ming
AU - Wang, Wen
AU - Guo, Shixi
AU - Liu, Weihua
AU - Liu, Hongzhong
AU - Wang, Xiaoli
N1 - Publisher Copyright:
© 2016, Springer Science+Business Media New York.
PY - 2016/7/1
Y1 - 2016/7/1
N2 - We have prepared three kinds of graphene heat dissipation film as non-continuous single layer single-crystal graphene (NCSG), continuous single layer graphene (CSG) and continuous double layer graphene (CDG). Then graphene was transferred on 2-inches SiO2/Si substrate as heat dissipation film. Temperature field distribution was tested by infrared camera, and thermal conductivity of composite interface of heat dissipation film on SiO2/Si was studied using Fourier’s law. When supply voltage was 10 V, NCSG film made the center temperature dropped by 1 °C, and CSG made the central temperature dropped by 6 °C and the thermal conductivity of CSG on SiO2/Si was increased by 15.7 %. For CSG on SiO2/Si, with the increased of supply voltage, the center temperature drop was increased, but the improvement of thermal conductivity was decreased.
AB - We have prepared three kinds of graphene heat dissipation film as non-continuous single layer single-crystal graphene (NCSG), continuous single layer graphene (CSG) and continuous double layer graphene (CDG). Then graphene was transferred on 2-inches SiO2/Si substrate as heat dissipation film. Temperature field distribution was tested by infrared camera, and thermal conductivity of composite interface of heat dissipation film on SiO2/Si was studied using Fourier’s law. When supply voltage was 10 V, NCSG film made the center temperature dropped by 1 °C, and CSG made the central temperature dropped by 6 °C and the thermal conductivity of CSG on SiO2/Si was increased by 15.7 %. For CSG on SiO2/Si, with the increased of supply voltage, the center temperature drop was increased, but the improvement of thermal conductivity was decreased.
UR - https://www.scopus.com/pages/publications/84962715031
U2 - 10.1007/s10854-016-4758-0
DO - 10.1007/s10854-016-4758-0
M3 - 文章
AN - SCOPUS:84962715031
SN - 0957-4522
VL - 27
SP - 7715
EP - 7721
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 7
ER -