Grain boundary void growth in bamboo interconnect under thermal residual stress field

An analytic expression is developed to predict grain boundary void growth in bamboo interconnect under thermal residual stress field. The rate process is controlled by grain boundary and interconnect/passivation interface diffusions. The thermal residual stress field relaxes during void growth. Based on the present analysis, the behaviors of the void growth and the stress redistribution are characterized as a function of the microstructure of the interconnect, the state of the thermal residual stress, the initial size of the void, as well as the diffusivity ratio between the interface and the grain boundary.