Giant electric field control of magnetism and narrow ferromagnetic resonance linewidth in FeCoSiB/Si/SiO2/PMN-PT multiferroic heterostructures

Y. Gao; X. Wang; L. Xie; Z. Hu; H. Lin; Z. Zhou; T. Nan; X. Yang; B. M. Howe; J. G. Jones; G. J. Brown; N. X. Sun

doi:10.1063/1.4953456

Giant electric field control of magnetism and narrow ferromagnetic resonance linewidth in FeCoSiB/Si/SiO₂/PMN-PT multiferroic heterostructures

Y. Gao
, X. Wang
, L. Xie
, Z. Hu
, H. Lin
, Z. Zhou
, T. Nan
, X. Yang
, B. M. Howe
, J. G. Jones
, G. J. Brown
, N. X. Sun

Northeastern University
Winchester Technologies, LLC.
Air Force Research Laboratory
Xi'an Jiaotong University
Beijing Institute of Technology

科研成果: 期刊稿件 › 文章 › 同行评审

19 引用（Scopus）

摘要

It has been challenging to achieve combined strong magnetoelectric coupling and narrow ferromagnetic resonance (FMR) linewidth in multiferroic heterostructures. Electric field induced large effective field of 175 Oe and narrow FMR linewidth of 40 Oe were observed in FeCoSiB/Si/SiO₂/PMN-PT heterostructures with substrate clamping effect minimized through removing the Si substrate. As a comparison, FeCoSiB/PMN-PT heterostructures with FeCoSiB film directly deposited on PMN-PT showed a comparable voltage induced effective magnetic field but a significantly larger FMR linewidth of 283 Oe. These multiferroic heterostructures exhibiting combined giant magnetoelectric coupling and narrow ferromagnetic resonance linewidth offer great opportunities for integrated voltage tunable RF magnetic devices.

源语言	英语
文章编号	232903
期刊	Applied Physics Letters
卷	108
期	23
DOI	https://doi.org/10.1063/1.4953456
出版状态	已出版 - 6 6月 2016
已对外发布	是

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title = "Giant electric field control of magnetism and narrow ferromagnetic resonance linewidth in FeCoSiB/Si/SiO2/PMN-PT multiferroic heterostructures",

abstract = "It has been challenging to achieve combined strong magnetoelectric coupling and narrow ferromagnetic resonance (FMR) linewidth in multiferroic heterostructures. Electric field induced large effective field of 175 Oe and narrow FMR linewidth of 40 Oe were observed in FeCoSiB/Si/SiO2/PMN-PT heterostructures with substrate clamping effect minimized through removing the Si substrate. As a comparison, FeCoSiB/PMN-PT heterostructures with FeCoSiB film directly deposited on PMN-PT showed a comparable voltage induced effective magnetic field but a significantly larger FMR linewidth of 283 Oe. These multiferroic heterostructures exhibiting combined giant magnetoelectric coupling and narrow ferromagnetic resonance linewidth offer great opportunities for integrated voltage tunable RF magnetic devices.",

author = "Y. Gao and X. Wang and L. Xie and Z. Hu and H. Lin and Z. Zhou and T. Nan and X. Yang and Howe, \{B. M.\} and Jones, \{J. G.\} and Brown, \{G. J.\} and Sun, \{N. X.\}",

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doi = "10.1063/1.4953456",

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T1 - Giant electric field control of magnetism and narrow ferromagnetic resonance linewidth in FeCoSiB/Si/SiO2/PMN-PT multiferroic heterostructures

AU - Gao, Y.

AU - Wang, X.

AU - Xie, L.

AU - Hu, Z.

AU - Lin, H.

AU - Zhou, Z.

AU - Nan, T.

AU - Yang, X.

AU - Howe, B. M.

AU - Jones, J. G.

AU - Brown, G. J.

AU - Sun, N. X.

PY - 2016/6/6

Y1 - 2016/6/6

N2 - It has been challenging to achieve combined strong magnetoelectric coupling and narrow ferromagnetic resonance (FMR) linewidth in multiferroic heterostructures. Electric field induced large effective field of 175 Oe and narrow FMR linewidth of 40 Oe were observed in FeCoSiB/Si/SiO2/PMN-PT heterostructures with substrate clamping effect minimized through removing the Si substrate. As a comparison, FeCoSiB/PMN-PT heterostructures with FeCoSiB film directly deposited on PMN-PT showed a comparable voltage induced effective magnetic field but a significantly larger FMR linewidth of 283 Oe. These multiferroic heterostructures exhibiting combined giant magnetoelectric coupling and narrow ferromagnetic resonance linewidth offer great opportunities for integrated voltage tunable RF magnetic devices.

AB - It has been challenging to achieve combined strong magnetoelectric coupling and narrow ferromagnetic resonance (FMR) linewidth in multiferroic heterostructures. Electric field induced large effective field of 175 Oe and narrow FMR linewidth of 40 Oe were observed in FeCoSiB/Si/SiO2/PMN-PT heterostructures with substrate clamping effect minimized through removing the Si substrate. As a comparison, FeCoSiB/PMN-PT heterostructures with FeCoSiB film directly deposited on PMN-PT showed a comparable voltage induced effective magnetic field but a significantly larger FMR linewidth of 283 Oe. These multiferroic heterostructures exhibiting combined giant magnetoelectric coupling and narrow ferromagnetic resonance linewidth offer great opportunities for integrated voltage tunable RF magnetic devices.

UR - https://www.scopus.com/pages/publications/84974625568

U2 - 10.1063/1.4953456

DO - 10.1063/1.4953456

M3 - 文章

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SN - 0003-6951

VL - 108

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ER -

Giant electric field control of magnetism and narrow ferromagnetic resonance linewidth in FeCoSiB/Si/SiO2/PMN-PT multiferroic heterostructures

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Giant electric field control of magnetism and narrow ferromagnetic resonance linewidth in FeCoSiB/Si/SiO₂/PMN-PT multiferroic heterostructures