g-C₃N₄ 基 S 型异质结光催化剂的制备方法和应用

Semiconductor photocatalysis is a technology that utilizes solar energy to excite catalysts, generating photogenerated carriers with redox capabilities. It has been widely applied across various fields. Graphitic carbon nitride (g-C₃N₄), as a non-polluting semiconductor, has garnered attention in the field of photocatalysis. However, its further development is limited by a high rate of photogenerated carrier recombination and low utilization of visible light. Constructing g-C₃N₄-based S-scheme heterojunctions is an effective strategy to address the issue of intrinsic charge carrier recombination, enabling effective spatial separation of charge carriers, reducing recombination rates, and enhancing photocatalytic performance. This article first introduces the mechanism of S-scheme heterojunctions, then focuses on the characteristics of preparation methods for g-C₃N_4-based S-scheme heterojunctions and their applications in different areas. Finally, it proposes the prospects and challenges faced by g-C₃N₄-based S-scheme heterojunctions in the field of photocatalysis.