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Fully Printed Flexible Crossbar Memory Devices with Tip-Enhanced Micro/Nanostructures

  • Qi Pan
  • , Meng Su
  • , Zeying Zhang
  • , Zheren Cai
  • , Yifan Li
  • , Zhandong Huang
  • , Xin Qian
  • , Xiaotian Hu
  • , Fengyu Li
  • , Huanli Dong
  • , Yanlin Song

科研成果: 期刊稿件文章同行评审

10 引用 (Scopus)

摘要

Flexible memory devices with optimal tip-enhanced structures and high density are necessary for data storage devices. Printed electronics combine an efficient manufacturing approach with diverse materials adoptability and multidimensional patterns. However, the precision of the printed structures and the nonuniform of the interfaces restrict the storage density and performance severely. A full printing strategy to fabricate crossbar memory devices with triangular prism–structured Ag microwire electrodes and Ag/silk fibroin conformal interlayers is reported. Based on tip-enhanced microelectrodes and flexible function layers, these crossbar memory devices show a high I ON /I OFF ratio (10 6 at 1 V) and sufficient retention time (>10 4 s) under 5 mm curvature radius bending. Devices with 2.5 × 10 5 bits cm −2 storage density can be printed (10 3 higher than previously reported results), which enables efficient implement of pattern matching in visual display. This full printing strategy offers efficient fabrication for highly integrated flexible memories and 3D multilayer microdevices.

源语言英语
文章编号1900131
期刊Advanced Electronic Materials
5
5
DOI
出版状态已出版 - 5月 2019
已对外发布

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