摘要
We demonstrate a photoexcitation-friction coupling in bilayered black phosphorus, a two-dimensional semiconductor crystallized via van der Waals interaction, using density functional theory and the Prandtl-Tomlinson model. Under an experimentally accessible electron-hole density of 5 × 1013 cm-2, the energy barrier for interlayer sliding can be reduced by 13% and the resultant reduction of critical force for stick-slip transition can be up to 4.7%. With the carrier density being doubled, the frictional anisotropy can even be eliminated. Analysis based on Born-Oppenheimer approximation shows that photoexcitation-friction coupling can be universal for van der Waals crystals with interlayer electronic states responsive to both photoexcitation and interlayer sliding.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 2910-2915 |
| 页数 | 6 |
| 期刊 | ACS Applied Materials and Interfaces |
| 卷 | 12 |
| 期 | 2 |
| DOI | |
| 出版状态 | 已出版 - 15 1月 2020 |
| 已对外发布 | 是 |
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