TY - JOUR
T1 - Frequency unlocking-based MEMS bifurcation sensors
AU - Qiao, Yan
AU - Shi, Zhan
AU - Xu, Yutao
AU - Wei, Xueyong
AU - Elhady, Alaaeldin
AU - Abdel-Rahman, Eihab
AU - Huan, Ronghua
AU - Zhang, Wenming
N1 - Publisher Copyright:
© 2023, The Author(s).
PY - 2023/12
Y1 - 2023/12
N2 - MEMS resonators exhibit rich dynamic behaviors under the internal resonance regime. In this work, we present a novel MEMS bifurcation sensor that exploits frequency unlocking due to a 1:3 internal resonance between two electrostatically coupled micro-resonators. The proposed detection mechanism allows the sensor to operate in binary (digital) and analog modes, depending on whether the sensor merely detects a significant jump event in the peak frequency upon unlocking or measures the shift in the peak frequency after unlocking and uses it in conjunction with a calibration curve to estimate the corresponding change in stimulus. We validate the success of this sensor paradigm by experimentally demonstrating charge detection. High charge resolutions are achieved in binary mode, up to 0.137 fC, and in analog mode, up to 0.01 fC. The proposed binary sensor enables extraordinarily high detection resolutions due to the excellent frequency stability under internal resonance and the high signal-to-noise ratio of the shift in peak frequency. Our findings offer new opportunities for high-performance ultrasensitive sensors.
AB - MEMS resonators exhibit rich dynamic behaviors under the internal resonance regime. In this work, we present a novel MEMS bifurcation sensor that exploits frequency unlocking due to a 1:3 internal resonance between two electrostatically coupled micro-resonators. The proposed detection mechanism allows the sensor to operate in binary (digital) and analog modes, depending on whether the sensor merely detects a significant jump event in the peak frequency upon unlocking or measures the shift in the peak frequency after unlocking and uses it in conjunction with a calibration curve to estimate the corresponding change in stimulus. We validate the success of this sensor paradigm by experimentally demonstrating charge detection. High charge resolutions are achieved in binary mode, up to 0.137 fC, and in analog mode, up to 0.01 fC. The proposed binary sensor enables extraordinarily high detection resolutions due to the excellent frequency stability under internal resonance and the high signal-to-noise ratio of the shift in peak frequency. Our findings offer new opportunities for high-performance ultrasensitive sensors.
UR - https://www.scopus.com/pages/publications/85159958898
U2 - 10.1038/s41378-023-00522-2
DO - 10.1038/s41378-023-00522-2
M3 - 文章
AN - SCOPUS:85159958898
SN - 2055-7434
VL - 9
JO - Microsystems and Nanoengineering
JF - Microsystems and Nanoengineering
IS - 1
M1 - 58
ER -