TY - JOUR
T1 - Formation of Voids or Stacking-Fault Tetrahedra Induced by Local Chemical Variations in Face-Centered-Cubic Complex Concentrated Alloys
AU - Lin, Yeping
AU - Lu, Chenyang
AU - Yang, Tengfei
AU - Su, Zhengxiong
AU - Deng, Yixin
AU - Hu, Wangyu
AU - Deng, Huiqiu
AU - Lu, Guanghong
AU - Gao, Fei
N1 - Publisher Copyright:
© 2026 American Physical Society.
PY - 2026/1/9
Y1 - 2026/1/9
N2 - Understanding how elemental variations influence defect cluster formation is a longstanding challenge in materials science. By combining defect rates-based long-time dynamics with molecular dynamics and irradiation experiments, we identify a distinct, cluster-mediated mechanism—governed by element-specific interactions—as the dominant driver of vacancy cluster evolution into voids or stacking-fault tetrahedra in irradiated complex concentrated alloys, specifically NiCoCr, Fe50Mn30Co10Cr10, and Ni at elevated temperatures. Unlike conventional models that focus on point defect behaviors, the proposed mechanism highlights a critical two-step process—vacancy-tetrahedron formation and annihilation—that governs the bifurcation of vacancy clusters. Ni and Co promote void formation by favoring annihilation over formation, leading to Ni/Co segregation, whereas larger atoms such as Cr, Fe, and Mn resist annihilation, thus favoring stacking-fault tetrahedra formation. These findings offer new insights into how local chemical environments influence defect evolution and provide strategies for tailoring materials to perform better under extreme conditions.
AB - Understanding how elemental variations influence defect cluster formation is a longstanding challenge in materials science. By combining defect rates-based long-time dynamics with molecular dynamics and irradiation experiments, we identify a distinct, cluster-mediated mechanism—governed by element-specific interactions—as the dominant driver of vacancy cluster evolution into voids or stacking-fault tetrahedra in irradiated complex concentrated alloys, specifically NiCoCr, Fe50Mn30Co10Cr10, and Ni at elevated temperatures. Unlike conventional models that focus on point defect behaviors, the proposed mechanism highlights a critical two-step process—vacancy-tetrahedron formation and annihilation—that governs the bifurcation of vacancy clusters. Ni and Co promote void formation by favoring annihilation over formation, leading to Ni/Co segregation, whereas larger atoms such as Cr, Fe, and Mn resist annihilation, thus favoring stacking-fault tetrahedra formation. These findings offer new insights into how local chemical environments influence defect evolution and provide strategies for tailoring materials to perform better under extreme conditions.
UR - https://www.scopus.com/pages/publications/105026749739
U2 - 10.1103/p629-97jn
DO - 10.1103/p629-97jn
M3 - 文章
AN - SCOPUS:105026749739
SN - 0031-9007
VL - 136
JO - Physical Review Letters
JF - Physical Review Letters
IS - 1
M1 - 016102
ER -