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First Principles Study of Mechanical Properties and Electronic Structures of Vanadium-Doped TiC and TiN

  • Shuting Sun
  • , Yangzhen Liu
  • , Hanguang Fu
  • , Xingye Guo
  • , Shengqiang Ma
  • , Jian Lin
  • , Gencai Guo
  • , Yongping Lei
  • , Ruzhi Wang
  • Beijing University of Technology
  • Xi'an Jiaotong University
  • Virginia Polytechnic Institute and State University

科研成果: 期刊稿件 › 文章 › 同行评审

20 引用 (Scopus)

摘要

The mechanical properties and electronic structures of TiC and TiN with different doping ratio of vanadium (V) are studied in this work using the first principles calculations. The simulation results show that Ti1−xVxN has lower formation energy than Ti1−xVxC, suggesting higher chemical stability of Ti1−xVxN. Ti0.25V0.75C and TiN show larger hardness than other Ti1−xVxC and Ti1−xVxN compounds. The anisotropic Young's modulus of Ti1−xVxC and Ti1−xVxN models are plotted in 3D surface constructions, and VN exhibited the strongest anisotropy. The uniaxial tensile simulation of Ti1−xVxC and Ti1−xVxN are conducted along [111] direction. The tensile strength of Ti1−xVxN is stronger than Ti1−xVxC. The tensile strength increases with the increasing of V-doping ratio. Furthermore, the electronic structures of Ti1−xVxC and Ti1−xVxN are estimated. The modeling techniques used in this work and the calculation results are helpful for systematically understanding the properties of Ti1−xVxC and Ti1−xVxN in nanoscale.

源语言英语
期刊论文编号1800295
期刊Advanced Engineering Materials
卷20
期10
DOI
出版状态已出版 - 10月 2018

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