TY - JOUR
T1 - First-principles investigation of electronic structure and energy level scheme of phosphors
T2 - The lanthanide-doped Sr2P2O7
AU - Yu, Jinying
AU - Fan, Yufan
AU - Wu, Lina
AU - Sun, Bei
AU - Wu, Yelong
N1 - Publisher Copyright:
© 2021 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited.
PY - 2021
Y1 - 2021
N2 - Using screened hybrid density functional theory (HSE06), the electronic structure, character of electronic transition and energy level scheme of lanthanide (Ln)-doped Sr2P2O7 are systematically investigated. Both Ln2+ and Ln3+ dopants are considered. It is found that, owing to the doping of Ln2+/3+ ions, some extra Ln 4 f and 5d states are introduced in the host Sr2P2O7 band gap, causing a change in the electronic structures and the luminescence properties. The specific locations of the Ln 4 f and 5d states and the possibility of electronic transitions, especially the 4 f → 5d, are systematically studied. The energy level scheme is constructed from the calculated electronic structures, and it fits well with the experimental scheme. This work gives a whole picture of the Ln doping effect on the materials. It can be applied to all Ln-doped fluorescent materials and to aid in the discovery of new bright scintillator materials.
AB - Using screened hybrid density functional theory (HSE06), the electronic structure, character of electronic transition and energy level scheme of lanthanide (Ln)-doped Sr2P2O7 are systematically investigated. Both Ln2+ and Ln3+ dopants are considered. It is found that, owing to the doping of Ln2+/3+ ions, some extra Ln 4 f and 5d states are introduced in the host Sr2P2O7 band gap, causing a change in the electronic structures and the luminescence properties. The specific locations of the Ln 4 f and 5d states and the possibility of electronic transitions, especially the 4 f → 5d, are systematically studied. The energy level scheme is constructed from the calculated electronic structures, and it fits well with the experimental scheme. This work gives a whole picture of the Ln doping effect on the materials. It can be applied to all Ln-doped fluorescent materials and to aid in the discovery of new bright scintillator materials.
UR - https://www.scopus.com/pages/publications/85107591848
U2 - 10.1149/2162-8777/abfc27
DO - 10.1149/2162-8777/abfc27
M3 - 文章
AN - SCOPUS:85107591848
SN - 2162-8769
VL - 10
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
IS - 5
M1 - 056004
ER -