TY - GEN
T1 - Ferroelectricity in Al-doped HfO2 on highly doped si substrate
AU - Liu, Lei Bai Xin
AU - Cheng, Yonghong
AU - Mao, Jiale
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/7/1
Y1 - 2017/7/1
N2 - Novel hafnium oxide (HfO2)-based ferroelectrics reveal high scalability and integratability with semiconductors and are regarded to be satisfying substitutes for traditional perovskite-based ferroelectrics used in nonvolatile ferroelectric random access memories. In this work, the influence of annealing atmosphere and temperature on structural and electrical properties of Al-doped HfO2 are investigated, and the underlying ferroelectric phase transition phenomena are deeply discussed. P-V and I-V characteristics of samples annealed at 700°C show typical ferroelectric hysteresis loop and dual current peaks at the voltage of about 6V, while samples annealed at 900°C show almost linear polarization. The sample annealed at 700°C for 30s in N2 possesses the largest switching current and remanent polarization value (2Pr=25.40μC/cm2) compared to the one in O2. TEM studies reveal that the deposited Al:HfO2 thin films show good uniformity and high crystallinity whatever the annealing temperature and atmosphere were adopted. The orthorhombic non-centrosymmetric phase induced during the rapid thermal annealing (RTA) process is proposed to be responsible for the ferroelectricity in HfO2. X-ray diffraction (GI-XRD) results indicate that the monoclinic phase fraction promoted with the increase of annealing temperature. Annealing temperature and atmosphere exhibit conspicuous influence on the ferroelectric phase transition, which lead to different proportion of ferroelectric phase and different remanent polarization in Al:HfO2 thin films.
AB - Novel hafnium oxide (HfO2)-based ferroelectrics reveal high scalability and integratability with semiconductors and are regarded to be satisfying substitutes for traditional perovskite-based ferroelectrics used in nonvolatile ferroelectric random access memories. In this work, the influence of annealing atmosphere and temperature on structural and electrical properties of Al-doped HfO2 are investigated, and the underlying ferroelectric phase transition phenomena are deeply discussed. P-V and I-V characteristics of samples annealed at 700°C show typical ferroelectric hysteresis loop and dual current peaks at the voltage of about 6V, while samples annealed at 900°C show almost linear polarization. The sample annealed at 700°C for 30s in N2 possesses the largest switching current and remanent polarization value (2Pr=25.40μC/cm2) compared to the one in O2. TEM studies reveal that the deposited Al:HfO2 thin films show good uniformity and high crystallinity whatever the annealing temperature and atmosphere were adopted. The orthorhombic non-centrosymmetric phase induced during the rapid thermal annealing (RTA) process is proposed to be responsible for the ferroelectricity in HfO2. X-ray diffraction (GI-XRD) results indicate that the monoclinic phase fraction promoted with the increase of annealing temperature. Annealing temperature and atmosphere exhibit conspicuous influence on the ferroelectric phase transition, which lead to different proportion of ferroelectric phase and different remanent polarization in Al:HfO2 thin films.
UR - https://www.scopus.com/pages/publications/85045192819
U2 - 10.1109/CEIDP.2017.8257486
DO - 10.1109/CEIDP.2017.8257486
M3 - 会议稿件
AN - SCOPUS:85045192819
T3 - Annual Report - Conference on Electrical Insulation and Dielectric Phenomena, CEIDP
SP - 70
EP - 73
BT - CEIDP 2017 - IEEE Conference on Electrical Insulation and Dielectric Phenomenon
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2017 IEEE Conference on Electrical Insulation and Dielectric Phenomenon, CEIDP 2017
Y2 - 22 October 2017 through 25 October 2017
ER -