TY - JOUR
T1 - Ferroelectric crystals with giant electro-optic property enabling ultracompact Q-switches
AU - Liu, Xin
AU - Tan, Peng
AU - Ma, Xue
AU - Wang, Danyang
AU - Jin, Xinyu
AU - Liu, Yao
AU - Xu, Bin
AU - Qiao, Liao
AU - Qiu, Chaorui
AU - Wang, Bo
AU - Zhao, Weigang
AU - Wei, Chaojie
AU - Song, Kexin
AU - Guo, Haisheng
AU - Li, Xudong
AU - Li, Sean
AU - Wei, Xiaoyong
AU - Chen, Long Qing
AU - Xu, Zhuo
AU - Li, Fei
AU - Tian, Hao
AU - Zhang, Shujun
N1 - Publisher Copyright:
© 2022 American Association for the Advancement of Science. All rights reserved.
PY - 2022/4/22
Y1 - 2022/4/22
N2 - Relaxor-lead titanate (PbTiO3) crystals, which exhibit extremely high piezoelectricity, are believed to possess high electro-optic (EO) coefficients. However, the optical transparency of relaxor-PbTiO3 crystals is severely reduced as a result of light scattering and reflection by domain walls, limiting electro-optic applications. Through synergistic design of a ferroelectric phase, crystal orientation, and poling technique, we successfully removed all light-scattering domain walls and achieved an extremely high transmittance of 99.6% in antireflection film–coated crystals, with an ultrahigh EO coefficient r33 of 900 picometers per volt (pm V−1), >30 times as high as that of conventionally used EO crystals. Using these crystals, we fabricated ultracompact EO Q-switches that require very low driving voltages, with superior performance to that of commercial Q-switches. Development of these materials is important for the portability and low driving voltage of EO devices.
AB - Relaxor-lead titanate (PbTiO3) crystals, which exhibit extremely high piezoelectricity, are believed to possess high electro-optic (EO) coefficients. However, the optical transparency of relaxor-PbTiO3 crystals is severely reduced as a result of light scattering and reflection by domain walls, limiting electro-optic applications. Through synergistic design of a ferroelectric phase, crystal orientation, and poling technique, we successfully removed all light-scattering domain walls and achieved an extremely high transmittance of 99.6% in antireflection film–coated crystals, with an ultrahigh EO coefficient r33 of 900 picometers per volt (pm V−1), >30 times as high as that of conventionally used EO crystals. Using these crystals, we fabricated ultracompact EO Q-switches that require very low driving voltages, with superior performance to that of commercial Q-switches. Development of these materials is important for the portability and low driving voltage of EO devices.
UR - https://www.scopus.com/pages/publications/85128592959
U2 - 10.1126/science.abn7711
DO - 10.1126/science.abn7711
M3 - 文章
C2 - 35446634
AN - SCOPUS:85128592959
SN - 0036-8075
VL - 376
SP - 371
EP - 377
JO - Science
JF - Science
IS - 6591
ER -