跳到主要导航 跳到搜索 跳到主要内容

Ferroelastic Domain-Induced Electronic Modulation in Halide Perovskites

  • Ganesh Narasimha
  • , Maryam Bari
  • , Benjamin J. Lawrie
  • , Ilia N. Ivanov
  • , Marti Checa
  • , Sumner B. Harris
  • , Zuo Guang Ye
  • , Rama Vasudevan
  • , Yongtao Liu
  • Oak Ridge National Laboratory
  • Simon Fraser University

科研成果: 期刊稿件文章同行评审

1 引用 (Scopus)

摘要

Lead halide perovskites have emerged as promising materials for optoelectronic applications due to their exceptional properties. In the all-inorganic CsPbBr3perovskites, ferroelastic domains formed during phase transitions enhance bulk transport and emissive efficiency. However, the microscopic mechanisms governing carrier dynamics remain poorly understood. In this study, we employ cathodoluminescence (CL) and micro-Raman spectroscopy to image and investigate the electronic properties of the ferroelastic domain walls in CsPbBr3single crystals. CL measurements reveal a reduced emissive yield and a slight redshift in emission at the domain walls. Further, micro-Raman studies provide spatially resolved mapping of vibrational modes, exhibiting second-order phonon modes localized at the domain boundaries. Our findings suggest that electron–phonon coupling at the twin domain walls plays a critical role in facilitating efficient charge separation, thereby improving the optoelectronic performance of the CsPbBr3perovskites.

源语言英语
页(从-至)54148-54156
页数9
期刊ACS Applied Materials and Interfaces
17
38
DOI
出版状态已出版 - 24 9月 2025
已对外发布

学术指纹

探究 'Ferroelastic Domain-Induced Electronic Modulation in Halide Perovskites' 的科研主题。它们共同构成独一无二的指纹。

引用此