Femtosecond laser micromachining in combination with ICP etching for 4H–SiC pressure sensor membranes

4H–SiC is one of the most promising materials for pressure sensing in harsh environments. A Yb:KGW femtosecond laser was employed to fabricate 4H–SiC sensor membranes with size of Φ1200 × 80 μm. The optimal parameter combination under 15 μJ single pulse energy was obtained with the laps of 16, the scanning speed of 130 mm/s, the scanning line interval of 2 μm and the repetition rate of 100 kHz. High size accuracy (±1%) and steep sidewall (87.4°) were achieved. Wet cleaning and inductively coupled plasma (ICP) etching can obviously improve the membrane bottom surface morphology. The surface roughness Ra in X direction was reduced from 0.82 μm to 0.15 μm, and that in Y direction was reduced from 1.32 μm to 0.16 μm. Pinhole defect was related to the nonuniform distribution of laser fluence. This defect can be avoided by reducing the laser spot overlap ratio. Energy-Dispersive X-ray Spectroscopy (EDS) and Raman spectrum were adopted to analyse the changes of material properties after laser processing. The analysis indicated that the crystal properties of the membrane bottom and the thin epitaxial layers on the front side of membrane are not damaged by the integrating micromachining. The results indicate the potential of utilizing the femtosecond laser combined with ICP etching to fabricate 4H–SiC sensor membranes.