摘要
ZnO thin films were grown on SiO2/Si substrates by radio-frequency magnetron sputtering. Based on the ZnO film, a photoconductive metal-semiconductor-metal ultraviolet detector was fabricated by a liftoff technique. Its I-V characteristics were observed at 365nm, and a fast response was observed by illumination with a KrF excimer laser.
| 源语言 | 英语 |
|---|---|
| 文章编号 | 064001 |
| 期刊 | Optical Engineering |
| 卷 | 47 |
| 期 | 6 |
| DOI | |
| 出版状态 | 已出版 - 2008 |
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