Fabrication of three-dimensional electromagnetic band-gap structure with high-K dielectric ceramics by rapid-prototyping

Three-Dimensional diamond structure electromagnetic band-gap (EBG) structures containing high-K dielectric ceramic Bi(Nb_0.992 V _0.008)O₄ (BVN) fabricated by rapid-prototyping (RP) technique were investigated. The simulations based on finite element method (FEM) were employed to model the band diagram. The influences of structure dimensions, aspect ratio and permittivity contrast on the band gap width were studied. The optimal band gap width EBGs were fabricated and investigated experimentally. EBG structures composed of epoxy resin diamond lattice and inverse-diamond lattice made of high-K BVN ceramic with silica gel were fabricated by RP method. The transmission characteristics of the EBG structures were measured by transmission/reflection (T/R) methods with a vector network analyzer. Obvious wide band-gaps of two EBGs with different lattice parameters were observed in the curve of transmission characteristics, which agreed well with the simulation results.