Fabrication of poly-Si TFTs on fine quartz fibers for display applications

A. Mimura; Y. Sugawara; M. Hiroshima; T. Ikehara; R. Maeda; K. Suzuki; K. Yase; I. Shuu; A. Nakajima; S. Toda; H. Koaizawa

Fabrication of poly-Si TFTs on fine quartz fibers for display applications

A. Mimura
, Y. Sugawara
, M. Hiroshima
, T. Ikehara
, R. Maeda
, K. Suzuki
, K. Yase
, I. Shuu
, A. Nakajima
, S. Toda
, H. Koaizawa

National Institute of Advanced Industrial Science and Technology
Nara Institute of Science and Technology
Furukawa Electric Co., Ltd.

科研成果: 会议稿件 › 论文 › 同行评审

1 引用（Scopus）

摘要

Top-gate type poly-Si thin film transistors (TFTs) were fabricated on fine quartz fibers using one-dimensional substrate processing for display applications. Resist-spray-coating, which has been used in MEMS fabrication, was applied to treat the long fibers. Maximum process temperature was 600°C. Successful operations of both n- and p- channel TFTs were confirmed.

源语言	英语
页	1975-1976
页数	2
出版状态	已出版 - 2007
已对外发布	是
活动	14th International Display Workshops, IDW '07 - Sapporo, 日本期限: 5 12月 2007 → 5 12月 2007

会议

会议	14th International Display Workshops, IDW '07
国家/地区	日本
市	Sapporo
时期	5/12/07 → 5/12/07

其它文件与链接

链接到 Scopus 的出版物

引用此

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title = "Fabrication of poly-Si TFTs on fine quartz fibers for display applications",

abstract = "Top-gate type poly-Si thin film transistors (TFTs) were fabricated on fine quartz fibers using one-dimensional substrate processing for display applications. Resist-spray-coating, which has been used in MEMS fabrication, was applied to treat the long fibers. Maximum process temperature was 600°C. Successful operations of both n- and p- channel TFTs were confirmed.",

author = "A. Mimura and Y. Sugawara and M. Hiroshima and T. Ikehara and R. Maeda and K. Suzuki and K. Yase and I. Shuu and A. Nakajima and S. Toda and H. Koaizawa",

year = "2007",

language = "英语",

pages = "1975--1976",

note = "14th International Display Workshops, IDW '07 ; Conference date: 05-12-2007 Through 05-12-2007",

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TY - CONF

T1 - Fabrication of poly-Si TFTs on fine quartz fibers for display applications

AU - Mimura, A.

AU - Sugawara, Y.

AU - Hiroshima, M.

AU - Ikehara, T.

AU - Maeda, R.

AU - Suzuki, K.

AU - Yase, K.

AU - Shuu, I.

AU - Nakajima, A.

AU - Toda, S.

AU - Koaizawa, H.

PY - 2007

Y1 - 2007

N2 - Top-gate type poly-Si thin film transistors (TFTs) were fabricated on fine quartz fibers using one-dimensional substrate processing for display applications. Resist-spray-coating, which has been used in MEMS fabrication, was applied to treat the long fibers. Maximum process temperature was 600°C. Successful operations of both n- and p- channel TFTs were confirmed.

AB - Top-gate type poly-Si thin film transistors (TFTs) were fabricated on fine quartz fibers using one-dimensional substrate processing for display applications. Resist-spray-coating, which has been used in MEMS fabrication, was applied to treat the long fibers. Maximum process temperature was 600°C. Successful operations of both n- and p- channel TFTs were confirmed.

UR - https://www.scopus.com/pages/publications/43349107125

M3 - 论文

AN - SCOPUS:43349107125

SP - 1975

EP - 1976

T2 - 14th International Display Workshops, IDW '07

Y2 - 5 December 2007 through 5 December 2007

ER -

Fabrication of poly-Si TFTs on fine quartz fibers for display applications

摘要

会议

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学术指纹

引用此