Fabrication of dual-termination Schottky barrier diode by using oxygen-/fluorine-terminated diamond

Dan Zhao; Zhangcheng Liu; Juan Wang; Yan Liang; Muhammad Nauman; Jiao Fu; Yan Feng Wang; Shuwei Fan; Wei Wang; Hong Xing Wang

doi:10.1016/j.apsusc.2018.06.270

Fabrication of dual-termination Schottky barrier diode by using oxygen-/fluorine-terminated diamond

Dan Zhao
, Zhangcheng Liu
, Juan Wang
, Yan Liang
, Muhammad Nauman
, Jiao Fu
, Yan Feng Wang
, Shuwei Fan
, Wei Wang
, Hong Xing Wang

电子与信息学部

科研成果: 期刊稿件 › 文章 › 同行评审

25 引用（Scopus）

摘要

Fabrication of dual-termination Schottky barrier diode (SBD _DT ) by using oxygen-/fluorine-terminated diamond (OT-/FT-diamond) has been carried out on P-/P+ diamond. X-ray photoelectron spectroscopy (XPS) measurement was used to determine the chemical composition of OT-/FT-diamond surface treated by ultraviolet ozone and C ₄ F ₈ plasma, respectively. The barrier heights of Au on OT-/FT-diamond were calculated to be 2.0 ± 0.12 and 2.39 ± 0.12 eV, respectively. Au film was patterned on the OT-/FT-diamond as the schottky electrode, and Ti/Au film were deposited on the backside of substrate as ohmic electrode, then a SBD _DT was achieved completely. SBD _DT exhibits better forward and reverse I-V characteristics based on the optimum OT-/FT-diamond (W _O /W _F ) area ratio 0.2, which illustrates that the combination of dual surface termination is an efficient way to optimize the performance of diamond SBD.

源语言	英语
页（从-至）	411-416
页数	6
期刊	Applied Surface Science
卷	457
DOI	https://doi.org/10.1016/j.apsusc.2018.06.270
出版状态	已出版 - 1 11月 2018

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10.1016/j.apsusc.2018.06.270

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@article{67451c18e26649adb03eb36436c18e6f,

title = "Fabrication of dual-termination Schottky barrier diode by using oxygen-/fluorine-terminated diamond",

abstract = " Fabrication of dual-termination Schottky barrier diode (SBD DT ) by using oxygen-/fluorine-terminated diamond (OT-/FT-diamond) has been carried out on P-/P+ diamond. X-ray photoelectron spectroscopy (XPS) measurement was used to determine the chemical composition of OT-/FT-diamond surface treated by ultraviolet ozone and C 4 F 8 plasma, respectively. The barrier heights of Au on OT-/FT-diamond were calculated to be 2.0 ± 0.12 and 2.39 ± 0.12 eV, respectively. Au film was patterned on the OT-/FT-diamond as the schottky electrode, and Ti/Au film were deposited on the backside of substrate as ohmic electrode, then a SBD DT was achieved completely. SBD DT exhibits better forward and reverse I-V characteristics based on the optimum OT-/FT-diamond (W O /W F ) area ratio 0.2, which illustrates that the combination of dual surface termination is an efficient way to optimize the performance of diamond SBD.",

keywords = "Barrier height, OT-/FT-diamond, SBD, Surface treatment, XPS",

author = "Dan Zhao and Zhangcheng Liu and Juan Wang and Yan Liang and Muhammad Nauman and Jiao Fu and Wang, \{Yan Feng\} and Shuwei Fan and Wei Wang and Wang, \{Hong Xing\}",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2018",

month = nov,

day = "1",

doi = "10.1016/j.apsusc.2018.06.270",

language = "英语",

volume = "457",

pages = "411--416",

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T1 - Fabrication of dual-termination Schottky barrier diode by using oxygen-/fluorine-terminated diamond

AU - Zhao, Dan

AU - Liu, Zhangcheng

AU - Wang, Juan

AU - Liang, Yan

AU - Nauman, Muhammad

AU - Fu, Jiao

AU - Wang, Yan Feng

AU - Fan, Shuwei

AU - Wang, Wei

AU - Wang, Hong Xing

PY - 2018/11/1

Y1 - 2018/11/1

N2 - Fabrication of dual-termination Schottky barrier diode (SBD DT ) by using oxygen-/fluorine-terminated diamond (OT-/FT-diamond) has been carried out on P-/P+ diamond. X-ray photoelectron spectroscopy (XPS) measurement was used to determine the chemical composition of OT-/FT-diamond surface treated by ultraviolet ozone and C 4 F 8 plasma, respectively. The barrier heights of Au on OT-/FT-diamond were calculated to be 2.0 ± 0.12 and 2.39 ± 0.12 eV, respectively. Au film was patterned on the OT-/FT-diamond as the schottky electrode, and Ti/Au film were deposited on the backside of substrate as ohmic electrode, then a SBD DT was achieved completely. SBD DT exhibits better forward and reverse I-V characteristics based on the optimum OT-/FT-diamond (W O /W F ) area ratio 0.2, which illustrates that the combination of dual surface termination is an efficient way to optimize the performance of diamond SBD.

AB - Fabrication of dual-termination Schottky barrier diode (SBD DT ) by using oxygen-/fluorine-terminated diamond (OT-/FT-diamond) has been carried out on P-/P+ diamond. X-ray photoelectron spectroscopy (XPS) measurement was used to determine the chemical composition of OT-/FT-diamond surface treated by ultraviolet ozone and C 4 F 8 plasma, respectively. The barrier heights of Au on OT-/FT-diamond were calculated to be 2.0 ± 0.12 and 2.39 ± 0.12 eV, respectively. Au film was patterned on the OT-/FT-diamond as the schottky electrode, and Ti/Au film were deposited on the backside of substrate as ohmic electrode, then a SBD DT was achieved completely. SBD DT exhibits better forward and reverse I-V characteristics based on the optimum OT-/FT-diamond (W O /W F ) area ratio 0.2, which illustrates that the combination of dual surface termination is an efficient way to optimize the performance of diamond SBD.

KW - Barrier height

KW - OT-/FT-diamond

KW - SBD

KW - Surface treatment

KW - XPS

UR - https://www.scopus.com/pages/publications/85049299050

U2 - 10.1016/j.apsusc.2018.06.270

DO - 10.1016/j.apsusc.2018.06.270

M3 - 文章

AN - SCOPUS:85049299050

SN - 0169-4332

VL - 457

SP - 411

EP - 416

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Fabrication of dual-termination Schottky barrier diode by using oxygen-/fluorine-terminated diamond

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