摘要
A new approach to the fabrication of back-gated graphene FET (field effect transistor) arrays on microchannels was investigated. Narrow walls fabricated on a substrate with SU-8 (a negative photoresist), with top metal electrodes were pressed onto another silicon/SiO 2 substrate with predeposited graphene pieces such that the electrodes came into contact with graphene pieces and formed the source and drain contact. The SU-8 narrow walls with the top metal layer were fabricated by the conventional lift-off process. The graphene pieces were reduced chemically from graphite oxide. The I DS changed immediately by more than 17% when the device was exposed to an ethanol atmosphere. The current recovered very well after the ethanol gas was pumped out. The SU-8 microchannels served as gas flow passages that helped the ethanol vapor reach the sensitive region of the device: the graphene channel. This work provides a convenient way of constructing back-gated graphene FETs for sensing applications. This method could potentially be scaled up for mass production.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 1971-1975 |
| 页数 | 5 |
| 期刊 | Applied Surface Science |
| 卷 | 258 |
| 期 | 6 |
| DOI | |
| 出版状态 | 已出版 - 1 1月 2012 |
学术指纹
探究 'Fabrication of a graphene field effect transistor array on microchannels for ethanol sensing' 的科研主题。它们共同构成独一无二的学术指纹。引用此
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