Fabrication and physical properties of thin tilms TiNx for infrared absorption

Bo Jiang; Tao Dong; Yong He; Zhaochu Yang; Yan Su; Kaiying Wang

doi:10.1149/06408.0179ecst

Fabrication and physical properties of thin tilms TiNx for infrared absorption

Bo Jiang
, Tao Dong
, Yong He
, Zhaochu Yang
, Yan Su
, Kaiying Wang

Nanjing University of Science and Technology
Buskerud-Vestfold University

科研成果: 期刊稿件 › 会议文章 › 同行评审

摘要

This paper reports fabrication, electrical and optical characterization of TiN_x thin films formed by reactive magnetron sputtering. The optimized resistivity of the films is applied to build a resonant structure for enhancing infrared absorptivity. The resistivity with 13% N₂ at 200 °C is close to the theoretical value 377 Ω/square. The light absorptivity of a multilayer structure (TiN_x/SiN_x/Al, SiNx/Al) has been recorded by Fourier Transform Infrared Spectroscopy (FTIR). A dramatic increase has been obtained as compared with the pristine SiN_x. The offset of optimal sheet resistance is about 70 Ω/square compared to the theoretical value in the FTIR measurements. The thickness of TiNx and absorption of silicon nitride caused by Si-N vibration are major factors leading to the differences.

源语言	英语
页（从-至）	179-183
页数	5
期刊	ECS Transactions
卷	64
期	8
DOI	https://doi.org/10.1149/06408.0179ecst
出版状态	已出版 - 2014
已对外发布	是
活动	Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 12 - 2014 ECS and SMEQ Joint International Meeting - Cancun, 墨西哥期限: 5 10月 2014 → 9 10月 2014

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title = "Fabrication and physical properties of thin tilms TiNx for infrared absorption",

abstract = "This paper reports fabrication, electrical and optical characterization of TiNx thin films formed by reactive magnetron sputtering. The optimized resistivity of the films is applied to build a resonant structure for enhancing infrared absorptivity. The resistivity with 13\% N2 at 200 °C is close to the theoretical value 377 Ω/square. The light absorptivity of a multilayer structure (TiNx/SiNx/Al, SiNx/Al) has been recorded by Fourier Transform Infrared Spectroscopy (FTIR). A dramatic increase has been obtained as compared with the pristine SiNx. The offset of optimal sheet resistance is about 70 Ω/square compared to the theoretical value in the FTIR measurements. The thickness of TiNx and absorption of silicon nitride caused by Si-N vibration are major factors leading to the differences.",

author = "Bo Jiang and Tao Dong and Yong He and Zhaochu Yang and Yan Su and Kaiying Wang",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 12 - 2014 ECS and SMEQ Joint International Meeting ; Conference date: 05-10-2014 Through 09-10-2014",

year = "2014",

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TY - JOUR

T1 - Fabrication and physical properties of thin tilms TiNx for infrared absorption

AU - Jiang, Bo

AU - Dong, Tao

AU - He, Yong

AU - Yang, Zhaochu

AU - Su, Yan

AU - Wang, Kaiying

N1 - Publisher Copyright: © The Electrochemical Society.

PY - 2014

Y1 - 2014

N2 - This paper reports fabrication, electrical and optical characterization of TiNx thin films formed by reactive magnetron sputtering. The optimized resistivity of the films is applied to build a resonant structure for enhancing infrared absorptivity. The resistivity with 13% N2 at 200 °C is close to the theoretical value 377 Ω/square. The light absorptivity of a multilayer structure (TiNx/SiNx/Al, SiNx/Al) has been recorded by Fourier Transform Infrared Spectroscopy (FTIR). A dramatic increase has been obtained as compared with the pristine SiNx. The offset of optimal sheet resistance is about 70 Ω/square compared to the theoretical value in the FTIR measurements. The thickness of TiNx and absorption of silicon nitride caused by Si-N vibration are major factors leading to the differences.

AB - This paper reports fabrication, electrical and optical characterization of TiNx thin films formed by reactive magnetron sputtering. The optimized resistivity of the films is applied to build a resonant structure for enhancing infrared absorptivity. The resistivity with 13% N2 at 200 °C is close to the theoretical value 377 Ω/square. The light absorptivity of a multilayer structure (TiNx/SiNx/Al, SiNx/Al) has been recorded by Fourier Transform Infrared Spectroscopy (FTIR). A dramatic increase has been obtained as compared with the pristine SiNx. The offset of optimal sheet resistance is about 70 Ω/square compared to the theoretical value in the FTIR measurements. The thickness of TiNx and absorption of silicon nitride caused by Si-N vibration are major factors leading to the differences.

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U2 - 10.1149/06408.0179ecst

DO - 10.1149/06408.0179ecst

M3 - 会议文章

AN - SCOPUS:84921270069

SN - 1938-5862

VL - 64

SP - 179

EP - 183

JO - ECS Transactions

JF - ECS Transactions

IS - 8

T2 - Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 12 - 2014 ECS and SMEQ Joint International Meeting

Y2 - 5 October 2014 through 9 October 2014

ER -

Fabrication and physical properties of thin tilms TiNx for infrared absorption

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