Exciton transition energies in In_xGa_1-xAs/InP SMQWs as a function of indium composition

Exciton transition energies in the In_xGa_1-xAs/InP strained multiple quantum wells (SMQWs) as a function of In_xGa_1-xAs quantum well indium composition were studied by using low temperature photoluminescence and absorption spectra as well as room temperature photovoltaic measurements. The experimental results are in good agreement with those calculated by using a deformation potential model. As indium composition increases, the exciton transition energies corresponding to 11H and 11L decrease and the separation between 11H and 11L absorption peaks vary. When x<0.42, the 11H energy is larger than 11L energy for a given indium composition; when x=0.42, the 11H energy is equal to the 11L energy; when x>0.42, the 11L energy is larger than 11H energy.