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Exceptional plasticity in the bulk single-crystalline van der Waals semiconductor InSe

  • Tian Ran Wei
  • , Min Jin
  • , Yuecun Wang
  • , Hongyi Chen
  • , Zhiqiang Gao
  • , Kunpeng Zhao
  • , Pengfei Qiu
  • , Zhiwei Shan
  • , Jun Jiang
  • , Rongbin Li
  • , Lidong Chen
  • , Jian He
  • , Xun Shi

科研成果: 期刊稿件文章同行评审

288 引用 (Scopus)

摘要

Inorganic semiconductors are vital for a number of critical applications but are almost universally brittle. Here, we report the superplastic deformability of indium selenide (InSe). Bulk single-crystalline InSe can be compressed by orders of magnitude and morphed into a Möbius strip or a simple origami at room temperature. The exceptional plasticity of this two-dimensional van der Waals inorganic semiconductor is attributed to the interlayer gliding and cross-layer dislocation slip that are mediated by the long-range In-Se Coulomb interaction across the van der Waals gap and soft intralayer In-Se bonding. We propose a combinatory deformability indicator (X) to prescreen candidate bulk semiconductors for use in next-generation deformable or flexible electronics.

源语言英语
页(从-至)542-545
页数4
期刊Science
369
6503
DOI
出版状态已出版 - 31 7月 2020

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