摘要
Inorganic semiconductors are vital for a number of critical applications but are almost universally brittle. Here, we report the superplastic deformability of indium selenide (InSe). Bulk single-crystalline InSe can be compressed by orders of magnitude and morphed into a Möbius strip or a simple origami at room temperature. The exceptional plasticity of this two-dimensional van der Waals inorganic semiconductor is attributed to the interlayer gliding and cross-layer dislocation slip that are mediated by the long-range In-Se Coulomb interaction across the van der Waals gap and soft intralayer In-Se bonding. We propose a combinatory deformability indicator (X) to prescreen candidate bulk semiconductors for use in next-generation deformable or flexible electronics.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 542-545 |
| 页数 | 4 |
| 期刊 | Science |
| 卷 | 369 |
| 期 | 6503 |
| DOI | |
| 出版状态 | 已出版 - 31 7月 2020 |
学术指纹
探究 'Exceptional plasticity in the bulk single-crystalline van der Waals semiconductor InSe' 的科研主题。它们共同构成独一无二的指纹。引用此
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