Evolution of high-quality homoepitaxial CVD diamond films induced by methane concentration

Pengfei Zhang; Weidong Chen; Longhui Zhang; Shi He; Hongxing Wang; Shufang Yan; Wen Ma; Chunxia Guo; Yanfeng Wang

doi:10.3390/coatings11080888

Evolution of high-quality homoepitaxial CVD diamond films induced by methane concentration

Pengfei Zhang
, Weidong Chen
, Longhui Zhang
, Shi He
, Hongxing Wang
, Shufang Yan
, Wen Ma
, Chunxia Guo
, Yanfeng Wang

电子与信息学部

Inner Mongolia University of Technology
Xi'an Jiaotong University
Inner Mongolia Key Laboratory of Thin Film and Coatings

科研成果: 期刊稿件 › 文章 › 同行评审

7 引用（Scopus）

摘要

In this paper, we successfully synthesized homoepitaxial diamond with high quality and atomically flat surface by microwave plasma chemical vapor deposition. The sample presents a growth rate of 3 µm/h, the lowest RMS of 0.573 nm, and the narrowest XRD FWHM of 31.32 arcsec. An effect analysis was also applied to discuss the influence of methane concentration on the diamond substrates.

源语言	英语
文章编号	888
期刊	Coatings
卷	11
期	8
DOI	https://doi.org/10.3390/coatings11080888
出版状态	已出版 - 8月 2021

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10.3390/coatings11080888

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title = "Evolution of high-quality homoepitaxial CVD diamond films induced by methane concentration",

abstract = "In this paper, we successfully synthesized homoepitaxial diamond with high quality and atomically flat surface by microwave plasma chemical vapor deposition. The sample presents a growth rate of 3 µm/h, the lowest RMS of 0.573 nm, and the narrowest XRD FWHM of 31.32 arcsec. An effect analysis was also applied to discuss the influence of methane concentration on the diamond substrates.",

keywords = "Diamond, Homoepitaxial, Methane",

author = "Pengfei Zhang and Weidong Chen and Longhui Zhang and Shi He and Hongxing Wang and Shufang Yan and Wen Ma and Chunxia Guo and Yanfeng Wang",

note = "Publisher Copyright: {\textcopyright} 2021 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2021",

month = aug,

doi = "10.3390/coatings11080888",

language = "英语",

volume = "11",

journal = "Coatings",

issn = "2079-6412",

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TY - JOUR

T1 - Evolution of high-quality homoepitaxial CVD diamond films induced by methane concentration

AU - Zhang, Pengfei

AU - Chen, Weidong

AU - Zhang, Longhui

AU - He, Shi

AU - Wang, Hongxing

AU - Yan, Shufang

AU - Ma, Wen

AU - Guo, Chunxia

AU - Wang, Yanfeng

PY - 2021/8

Y1 - 2021/8

N2 - In this paper, we successfully synthesized homoepitaxial diamond with high quality and atomically flat surface by microwave plasma chemical vapor deposition. The sample presents a growth rate of 3 µm/h, the lowest RMS of 0.573 nm, and the narrowest XRD FWHM of 31.32 arcsec. An effect analysis was also applied to discuss the influence of methane concentration on the diamond substrates.

AB - In this paper, we successfully synthesized homoepitaxial diamond with high quality and atomically flat surface by microwave plasma chemical vapor deposition. The sample presents a growth rate of 3 µm/h, the lowest RMS of 0.573 nm, and the narrowest XRD FWHM of 31.32 arcsec. An effect analysis was also applied to discuss the influence of methane concentration on the diamond substrates.

KW - Diamond

KW - Homoepitaxial

KW - Methane

UR - https://www.scopus.com/pages/publications/85111733652

U2 - 10.3390/coatings11080888

DO - 10.3390/coatings11080888

M3 - 文章

AN - SCOPUS:85111733652

SN - 2079-6412

VL - 11

JO - Coatings

JF - Coatings

IS - 8

M1 - 888

ER -

Evolution of high-quality homoepitaxial CVD diamond films induced by methane concentration

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