摘要
Oxides form a class of material, which covers almost all the spectra of functionalities: dielectric, semiconductor, metallic, superconductor, optically nonlinear, piezoelectric, ferroelectric, ferromagnetic, etc. In this chapter, the integration of epitaxial crystalline oxides on the workhorse of the semiconductor industry, the silicon, by molecular beam epitaxy (MBE) is introduced. This chapter reviews the key factors for the epitaxy of oxide crystal on semiconductor as well as the nucleation and growth of semiconductor on oxide substrate. A state of the art for epitaxial systems combining oxides and semiconductors is then given. Finally, a comparison between different complex oxide growth techniques and a description of devices for nanoelectronics combining semiconductors and oxides are presented.
| 源语言 | 英语 |
|---|---|
| 主期刊名 | Molecular Beam Epitaxy |
| 主期刊副标题 | from Research to Mass Production |
| 出版商 | Elsevier |
| 页 | 377-402 |
| 页数 | 26 |
| ISBN(电子版) | 9780128121368 |
| ISBN(印刷版) | 9780128121375 |
| DOI | |
| 出版状态 | 已出版 - 1 1月 2018 |
学术指纹
探究 'Epitaxial Systems Combining Oxides and Semiconductors' 的科研主题。它们共同构成独一无二的指纹。引用此
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