摘要
Epitaxial (LaBa)Co2O5+δ thin films were grown on (001) LaAlO3 single-crystal substrates using pulsed laser deposition. Microstructure characterizations from X-ray diffraction and electron microscopy indicate that the films are highly c-axis oriented with cube-on-cube epitaxy. Transport property measurements indicate that the films have typical semiconductor behavior with a novel phase transition and hysteresis phenomena at 540 K. The chemical dynamic studies reveals that the resistance of the film changes drastically with the change of redox environment, i.e., the magnitude of resistance changes, ΔR = 1 × 102↔1 × 10 6, is found within a short response time (∼700ms). These phenomena suggest that the as-grown (LaBa)Co2O5+δ film have extraordinary sensitivity to rcducing-oxidizing environment and the exceedingly fast surface exchange rate.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 799-802 |
| 页数 | 4 |
| 期刊 | Chemistry of Materials |
| 卷 | 22 |
| 期 | 3 |
| DOI | |
| 出版状态 | 已出版 - 9 2月 2010 |
| 已对外发布 | 是 |
学术指纹
探究 'Epitaxial nature and transport properties in (LaBa)Co2O 5+δ thin films' 的科研主题。它们共同构成独一无二的学术指纹。引用此
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver