TY - GEN
T1 - Epitaxial growth of single crystalline lattice-matched Pr 0.9Y1.1O3 on SrO-passivated Si (001)
T2 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
AU - Niu, G.
AU - Zaumseil, P.
AU - Schubert, M. A.
AU - Zoellner, M. H.
AU - Dabrowski, J.
AU - Schroeder, T.
PY - 2012
Y1 - 2012
N2 - In this work, SrO buffer layers were employed as an interface engineering approach to realize single crystalline mixed ternary rare earth bixbyite oxide (RE2O3) films on Si (001) substrate. Single crystalline mixed PrxY2-xO3 (x=0-2) has been successfully grown on Si (111) (Ref. 7). However, the formation of such mixed oxide can only be realized at >750 °C, therefore when it is directly grown on Si (001) PrxY2-xO3 is polycrystalline due to the formation of an amorphous silicate or SiO2 interfacial layer on Si (001). A 1/2 monolayer (ML) SrO buffer layer can effectively prevent the interface reaction thus it allows realizing single crystalline ternary mixed Pr0.9Y1.1O3 films on Si (001). This fully lattice-matched RE2O3 film demonstrates 110 orientation on Si (001). Furthermore, SrO buffer layers are not only important to control the single crystallinity but also the growth orientation and crystallization behaviour of ternary RE2O3 films. A 111-oriented, phase separated Pr2O3-Y2O3 film was obtained under identical growth conditions by simply increasing the thickness of SrO buffer layer to 3 ML.
AB - In this work, SrO buffer layers were employed as an interface engineering approach to realize single crystalline mixed ternary rare earth bixbyite oxide (RE2O3) films on Si (001) substrate. Single crystalline mixed PrxY2-xO3 (x=0-2) has been successfully grown on Si (111) (Ref. 7). However, the formation of such mixed oxide can only be realized at >750 °C, therefore when it is directly grown on Si (001) PrxY2-xO3 is polycrystalline due to the formation of an amorphous silicate or SiO2 interfacial layer on Si (001). A 1/2 monolayer (ML) SrO buffer layer can effectively prevent the interface reaction thus it allows realizing single crystalline ternary mixed Pr0.9Y1.1O3 films on Si (001). This fully lattice-matched RE2O3 film demonstrates 110 orientation on Si (001). Furthermore, SrO buffer layers are not only important to control the single crystallinity but also the growth orientation and crystallization behaviour of ternary RE2O3 films. A 111-oriented, phase separated Pr2O3-Y2O3 film was obtained under identical growth conditions by simply increasing the thickness of SrO buffer layer to 3 ML.
UR - https://www.scopus.com/pages/publications/84874825763
U2 - 10.1109/ICSICT.2012.6467815
DO - 10.1109/ICSICT.2012.6467815
M3 - 会议稿件
AN - SCOPUS:84874825763
SN - 9781467324724
T3 - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
BT - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Y2 - 29 October 2012 through 1 November 2012
ER -