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Epitaxial growth and structural property of graphene on Pt(111)

  • M. Gao
  • , Y. Pan
  • , L. Huang
  • , H. Hu
  • , L. Z. Zhang
  • , H. M. Guo
  • , S. X. Du
  • , H. J. Gao
  • CAS - Institute of Physics

科研成果: 期刊稿件文章同行评审

255 引用 (Scopus)

摘要

We report on epitaxial growth of graphene on Pt(111) surface. It was found out that the proportion of different rotational domains varies with growth temperature and the graphene quality can be improved by adjusting both the growth temperature and ethylene exposure. Rippled and unrippled domains of high quality graphene are observed. The adhesive energy and electronic structure of two models, representing rippled and unrippled graphene, are obtained with density functional theory calculation, which shows that the interaction between graphene and Pt(111) surface is very weak and the electronic structure is nearly the same as that of a free standing graphene.

源语言英语
文章编号033101
期刊Applied Physics Letters
98
3
DOI
出版状态已出版 - 17 1月 2011
已对外发布

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