Electron emission properties of silicon-rich silicon oxide film prepared by reactive magnetron sputtering deposition and rapid thermal annealing

Silicon-rich silicon oxide (SRSO) film was prepared through the deposition of SiOx film by radio-frequency reactive magnetron sputtering from a Si target and the subsequent rapid thermal annealing treatment of SiOx film, and planar-type field emission cathodes based on SRSO film were fabricated. The surface morphologies and electron emission properties of the SRSO films deposited under different O2/Ar flow ratios were investigated. The experimental results show that a relatively high O2/Ar flow ratio during the deposition of SiOx film can lead to the formation of cluster structure in the SRSO film prepared, and the electron emission efficiency of SRSO film rises with the increase of electric field applied. An SRSO-film cathode fabricated under an O2/Ar flow ratio of 1:1 with a chamber pressure of 0.21 Pa has an emission current density of 65.61 μA/cm² and a corresponding emission efficiency of 0.53% at a bias voltage of 18 V, and it exhibits relatively stable emission and fine emission uniformity.