Electrical properties of direct deposited piezoelectric thick film formed by gas deposition method annealing effect of the deposited films

Ultrafine particles jetting with the velocities of several hundreds m/s are accumulated on the metal and ceramic substrate via impact adhesion. Recently, the application of this phenomenon as a thick film formation method has been investigated for micro electro mechanical systems (MEMS) and micro devices. The gas deposition method is one of the thick film formation method based on impact adhesion of ultrafine particle. In this paper, the optimum annealing condition for the deposited Pb(Zr,Ti)O₃ film with thickness over 10 μ m is reported. For the deposited films after annealing at 600°C for 1 hour, the remanent polarization of 20 μ C/cm² and the coercive filed of 44.7kV / cm was obtained.