Effect of polarization-memory in SrTiO₃/La_0.9Sr _0.1MnO₃ multilayer on Si substrate

SrTiO₃/La_0.9Sr_0.1MnO₃ (STO/LSMO) multilayer was fabricated on n-Si (100) substrate by using a computer-controlled laser molecular-beam epitaxy technique. A rectifying behavior was observed in the multilayer. Meanwhile, the capancitance-voltage (C-V) characteristics were investigated, which reveals a hysteresis memory effect in forward and backward bias regions. A detail study suggests that the hysteresis behaviors originate from the cooperation and competition between the interfacial polarization and trapping/detrapping mechanisms. Our results are expected to meet the high desire of the optimization and device design of random access memory.