Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector

Z. C. Liu; F. N. Li; W. Wang; J. W. Zhang; F. Lin; H. X. Wang

doi:10.1557/adv.2016.84

Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector

Z. C. Liu
, F. N. Li
, W. Wang
, J. W. Zhang
, F. Lin
, H. X. Wang

电子与信息学部

Xi'an Jiaotong University

科研成果: 期刊稿件 › 文章 › 同行评审

14 引用（Scopus）

摘要

The performance of new type three dimensional buried-in electrode structure ultraviolet photodetector fabricated on single crystal diamond epitaxial layer was investigated. The epitaxial layer was grown on high-pressure-higherature Ib-type diamond substrate. Then the buried-in electrodes with different depths were formed by oxygen plasma reactive ion etching method and radio frequency magnetron sputtering technique on this diamond layer. Compared with that of traditional planar electrode photodetector, the responsivity of buried-in electrode photodetector shows higher value, which reaches the highest when the electrode depth is 100 nm.

源语言	英语
页（从-至）	1099-1104
页数	6
期刊	MRS Advances
卷	1
期	16
DOI	https://doi.org/10.1557/adv.2016.84
出版状态	已出版 - 2016

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10.1557/adv.2016.84

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@article{fef30fb7704540fbb218c7d6c5ab3e85,

title = "Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector",

abstract = "The performance of new type three dimensional buried-in electrode structure ultraviolet photodetector fabricated on single crystal diamond epitaxial layer was investigated. The epitaxial layer was grown on high-pressure-higherature Ib-type diamond substrate. Then the buried-in electrodes with different depths were formed by oxygen plasma reactive ion etching method and radio frequency magnetron sputtering technique on this diamond layer. Compared with that of traditional planar electrode photodetector, the responsivity of buried-in electrode photodetector shows higher value, which reaches the highest when the electrode depth is 100 nm.",

keywords = "Optoelectronic, devices, diamond",

author = "Liu, \{Z. C.\} and Li, \{F. N.\} and W. Wang and Zhang, \{J. W.\} and F. Lin and Wang, \{H. X.\}",

note = "Publisher Copyright: {\textcopyright} 2016 Materials Research Society.",

year = "2016",

doi = "10.1557/adv.2016.84",

language = "英语",

volume = "1",

pages = "1099--1104",

journal = "MRS Advances",

issn = "2059-8521",

publisher = "Springer Nature",

number = "16",

}

TY - JOUR

T1 - Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector

AU - Liu, Z. C.

AU - Li, F. N.

AU - Wang, W.

AU - Zhang, J. W.

AU - Lin, F.

AU - Wang, H. X.

PY - 2016

Y1 - 2016

N2 - The performance of new type three dimensional buried-in electrode structure ultraviolet photodetector fabricated on single crystal diamond epitaxial layer was investigated. The epitaxial layer was grown on high-pressure-higherature Ib-type diamond substrate. Then the buried-in electrodes with different depths were formed by oxygen plasma reactive ion etching method and radio frequency magnetron sputtering technique on this diamond layer. Compared with that of traditional planar electrode photodetector, the responsivity of buried-in electrode photodetector shows higher value, which reaches the highest when the electrode depth is 100 nm.

AB - The performance of new type three dimensional buried-in electrode structure ultraviolet photodetector fabricated on single crystal diamond epitaxial layer was investigated. The epitaxial layer was grown on high-pressure-higherature Ib-type diamond substrate. Then the buried-in electrodes with different depths were formed by oxygen plasma reactive ion etching method and radio frequency magnetron sputtering technique on this diamond layer. Compared with that of traditional planar electrode photodetector, the responsivity of buried-in electrode photodetector shows higher value, which reaches the highest when the electrode depth is 100 nm.

KW - Optoelectronic

KW - devices

KW - diamond

UR - https://www.scopus.com/pages/publications/85017246182

U2 - 10.1557/adv.2016.84

DO - 10.1557/adv.2016.84

M3 - 文章

AN - SCOPUS:85017246182

SN - 2059-8521

VL - 1

SP - 1099

EP - 1104

JO - MRS Advances

JF - MRS Advances

IS - 16

ER -

Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector

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