Effect of γ-Ray Irradiation on the Electrical Performance of SiC Junction Barrier Schottky Diodes

This study systematically investigates the effects of Gamma (γ) ray irradiation on the electrical performance of silicon carbide (SiC) junction barrier Schottky diodes (JBSDs) using a ⁶⁰CO γ-ray radiation source. The key electrical parameters such as ideality factor, Schottky barrier height, and series resistance showed a clear dose-dependent deterioration. The conductance technique reveals that the γ-ray irradiation introduces traps near the metal–semiconductor (M-S) interface, increased by nearly 60% from(Formula presented) before irradiation to (Formula presented) . Additionally, the deep-level transient spectroscopy (DLTS) analysis reveal that the defect density and cross section of defect1 (E_C-0.22 eV) and defect2 (E_C-0.45 eV) are increased, and a new defect3 (E_v+0.11 ) emerges after a 3 kGy dose irradiation. This confirms that γ-ray irradiation induced displacement damage in the SiC crystal lattice. The induced displacement damage causes the formation of carrier traps and recombination centers, resulting in reduced carrier concentration, mobility, and lifetime. This study provides crucial insights into the mechanisms behind γ-ray-induced degradation in SiC JBSDs and underscores the importance of further research into enhancing the radiation tolerance of SiC-based devices for applications in aerospace industry.