TY - JOUR
T1 - E-field control of exchange bias and deterministic magnetization switching in AFM/FM/FE multiferroic heterostructures
AU - Liu, Ming
AU - Lou, Jing
AU - Li, Shandong
AU - Sun, Nian X.
PY - 2011/7/8
Y1 - 2011/7/8
N2 - The coexistence of electrical polarization and magnetization in multiferroic materials provides great opportunities for novel information storage systems. In particular, magnetoelectric (ME) effect can be realized in multiferroic composites consisting of both ferromagnetic and ferroelectric phases through a strain mediated interaction, which offers the possibility of electric field (E-field) manipulation of magnetic properties or vice versa, and enables novel multiferroic devices such as magnetoelectric random access memories (MERAMs). These MERAMs combine the advantages of FeRAMs (ferroelectric random access memories) and MRAMs (magnetic random access memories), which are non-volatile magnetic bits switchable by electric field (E-field). However, it has been challenging to realize 180° deterministic switching of magnetization by E-field, on which most magnetic memories are based. Here we show E-field modulating exchange bias and for the first time realization of near 180° dynamic magnetization switching at room temperature in novel AFM (antiferromagnetic)/FM (ferromagnetic)/FE (ferroelectric) multiferroic heterostructures of FeMn/Ni80Fe20/FeGaB/PZN-PT (lead zinc niobate-lead titanate). Through competition between the E-field induced uniaxial anisotropy and unidirectional anisotropy, large E-field-induced exchange bias field-shift up to Δ Hex Hex = 218 and near 180° deterministic magnetization switching were demonstrated in the exchange-coupled multiferroic system of FeMn/Ni80Fe20/FeGaB/PZN-PT. This E-field tunable exchange bias and near 180° deterministic magnetization switching at room temperature in AFM/FM/FE multiferroic heterostructures paves a new way for MERAMs and other memory technologies. Electric field modulating exchange bias and near 180° dynamic magnetization switching at room temperature were demonstrated in novel AFM (antiferromagnetic)/FM(ferromagnetic) /FE(ferroelectric) multiferroic heterostructures of FeMn/Ni80Fe 20/FeGaB/PZN-PT. Through competition between E-field induced uniaxial anisotropy and unidirectional anisotropy, large E-field induced exchange bias field shift up to Δ Hex = 42Oe and near 180° deterministic magnetization switching were achieved, which would pave a new way for magnetoelectric random access memories and other memory technologies.
AB - The coexistence of electrical polarization and magnetization in multiferroic materials provides great opportunities for novel information storage systems. In particular, magnetoelectric (ME) effect can be realized in multiferroic composites consisting of both ferromagnetic and ferroelectric phases through a strain mediated interaction, which offers the possibility of electric field (E-field) manipulation of magnetic properties or vice versa, and enables novel multiferroic devices such as magnetoelectric random access memories (MERAMs). These MERAMs combine the advantages of FeRAMs (ferroelectric random access memories) and MRAMs (magnetic random access memories), which are non-volatile magnetic bits switchable by electric field (E-field). However, it has been challenging to realize 180° deterministic switching of magnetization by E-field, on which most magnetic memories are based. Here we show E-field modulating exchange bias and for the first time realization of near 180° dynamic magnetization switching at room temperature in novel AFM (antiferromagnetic)/FM (ferromagnetic)/FE (ferroelectric) multiferroic heterostructures of FeMn/Ni80Fe20/FeGaB/PZN-PT (lead zinc niobate-lead titanate). Through competition between the E-field induced uniaxial anisotropy and unidirectional anisotropy, large E-field-induced exchange bias field-shift up to Δ Hex Hex = 218 and near 180° deterministic magnetization switching were demonstrated in the exchange-coupled multiferroic system of FeMn/Ni80Fe20/FeGaB/PZN-PT. This E-field tunable exchange bias and near 180° deterministic magnetization switching at room temperature in AFM/FM/FE multiferroic heterostructures paves a new way for MERAMs and other memory technologies. Electric field modulating exchange bias and near 180° dynamic magnetization switching at room temperature were demonstrated in novel AFM (antiferromagnetic)/FM(ferromagnetic) /FE(ferroelectric) multiferroic heterostructures of FeMn/Ni80Fe 20/FeGaB/PZN-PT. Through competition between E-field induced uniaxial anisotropy and unidirectional anisotropy, large E-field induced exchange bias field shift up to Δ Hex = 42Oe and near 180° deterministic magnetization switching were achieved, which would pave a new way for magnetoelectric random access memories and other memory technologies.
KW - 180 degree magnetization switching
KW - exchange coupling
KW - magnetoelectric coupling (ME)
KW - magnetoelectric random access memories
KW - multiferroics
UR - https://www.scopus.com/pages/publications/79960019873
U2 - 10.1002/adfm.201002485
DO - 10.1002/adfm.201002485
M3 - 文章
AN - SCOPUS:79960019873
SN - 1616-301X
VL - 21
SP - 2593
EP - 2598
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 13
ER -