TY - GEN
T1 - Dynamic Characterizations of 650 V, 900 V and 1200 V SiC MOSFETs under Low Temperatures
AU - Wei, Yuqi
AU - Hossain, Md Maksudul
AU - Mantooth, Alan
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - In this article, the dynamic performances of different voltage levels silicon carbide (SiC) MOSFETs from different vendors are investigated. The evaluated SiC MOSFETs including SCT3120AL (650 V/21 A, ROHM), SCT3030AL (650V/70A, ROHM), C3M0120090D (900 V/23 A, CREE), C2M0025120 (1200 V/63 A, CREE), SCT50N120 (1200 V/65 A, STMicroelectronics), SCH2080KE (1200 V/40 A, ROHM), and MSA12N080A (1200 V/20 A, MONOLITH). The double pulse test circuit is used to evaluate the device dynamic performances. The liquid nitrogen and cryogenic chamber are used to achieve low temperature operation. Due to the malfunction of gate driver, the dynamic characterization results are only given in the temperature range of [143 K, 298 K]. The experiment results demonstrate that high voltage SiC MOSFETs (1200 V) have degraded dynamic performances, while the dynamic performances for low voltage SiC MOSFETs are relatively stable.
AB - In this article, the dynamic performances of different voltage levels silicon carbide (SiC) MOSFETs from different vendors are investigated. The evaluated SiC MOSFETs including SCT3120AL (650 V/21 A, ROHM), SCT3030AL (650V/70A, ROHM), C3M0120090D (900 V/23 A, CREE), C2M0025120 (1200 V/63 A, CREE), SCT50N120 (1200 V/65 A, STMicroelectronics), SCH2080KE (1200 V/40 A, ROHM), and MSA12N080A (1200 V/20 A, MONOLITH). The double pulse test circuit is used to evaluate the device dynamic performances. The liquid nitrogen and cryogenic chamber are used to achieve low temperature operation. Due to the malfunction of gate driver, the dynamic characterization results are only given in the temperature range of [143 K, 298 K]. The experiment results demonstrate that high voltage SiC MOSFETs (1200 V) have degraded dynamic performances, while the dynamic performances for low voltage SiC MOSFETs are relatively stable.
KW - Cryogenic power electronics
KW - SiC MOSFET
KW - dynamic performance
UR - https://www.scopus.com/pages/publications/85137587717
U2 - 10.1109/AERO53065.2022.9843464
DO - 10.1109/AERO53065.2022.9843464
M3 - 会议稿件
AN - SCOPUS:85137587717
T3 - IEEE Aerospace Conference Proceedings
BT - 2022 IEEE Aerospace Conference, AERO 2022
PB - IEEE Computer Society
T2 - 2022 IEEE Aerospace Conference, AERO 2022
Y2 - 5 March 2022 through 12 March 2022
ER -