Domain wall motion in A and B site donor-doped Pb (Zr _0.52 Ti _0.48) O ₃ films

Donor-doped PbZr _0.52Ti _0.48O ₃ (PZT) films were utilized to study the effect of dopants on the mobility of ferroelectric domain walls. For chemical solution deposited PZT films 2 μm in thickness, doped with 1%-4% Nb or La, the low field dielectric permittivity remained between 1100 and 1300. With increasing Nb concentration, both the reversible and irreversible Rayleigh constants increased from ε _init and α' of 1150 and 39 cm/kV, respectively, for undoped PZT films to 1360 and 43 cm/kV for films doped with 2 mol% Nb. La doping increased the irreversible Rayleigh constant but did not strongly affect the reversible Rayleigh parameter. These observations are consistent with softening of the dielectric and electromechanical response with donor doping.