DM Interference Propagation Mathematical Modeling in SiC Wirebond Multichip Power Module

Xiliang Chen; Wenjie Chen; Yu Ren; Xu Yang; Liang Qiao

doi:10.1109/TCSII.2020.3041675

DM Interference Propagation Mathematical Modeling in SiC Wirebond Multichip Power Module

Xiliang Chen
, Wenjie Chen
, Yu Ren
, Xu Yang
, Liang Qiao

电气工程学院

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

In this brief, a novel differential-mode (DM) interference propagation mathematical modeling method based on parasitic inductive coupling theory for SiC wirebond multichip power module (SWMPM) with adjacent decoupling capacitor is proposed. Based on the proposed model, the strong and weak inductive coupling theory of DM interference equivalent circuit is proposed. And the influence of different position of decoupling capacitors on DM equivalent current is mathematically analyzed. A custom-made 1.2kV 160A power module based on DM interference optimized layout is built. It is compared with a commercial SiC power module, which can verify the feasibility and validity of the theoretical analysis.

源语言	英语
文章编号	9274371
页（从-至）	2077-2081
页数	5
期刊	IEEE Transactions on Circuits and Systems II: Express Briefs
卷	68
期	6
DOI	https://doi.org/10.1109/TCSII.2020.3041675
出版状态	已出版 - 6月 2021

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10.1109/TCSII.2020.3041675

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title = "DM Interference Propagation Mathematical Modeling in SiC Wirebond Multichip Power Module",

abstract = "In this brief, a novel differential-mode (DM) interference propagation mathematical modeling method based on parasitic inductive coupling theory for SiC wirebond multichip power module (SWMPM) with adjacent decoupling capacitor is proposed. Based on the proposed model, the strong and weak inductive coupling theory of DM interference equivalent circuit is proposed. And the influence of different position of decoupling capacitors on DM equivalent current is mathematically analyzed. A custom-made 1.2kV 160A power module based on DM interference optimized layout is built. It is compared with a commercial SiC power module, which can verify the feasibility and validity of the theoretical analysis.",

keywords = "EMI, SiC MOSFET, decoupling capacitors, differential-mode interference, inductive coupling, mathematical modeling, parallel-connected",

author = "Xiliang Chen and Wenjie Chen and Yu Ren and Xu Yang and Liang Qiao",

note = "Publisher Copyright: {\textcopyright} 2004-2012 IEEE.",

year = "2021",

month = jun,

doi = "10.1109/TCSII.2020.3041675",

language = "英语",

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TY - JOUR

T1 - DM Interference Propagation Mathematical Modeling in SiC Wirebond Multichip Power Module

AU - Chen, Xiliang

AU - Chen, Wenjie

AU - Ren, Yu

AU - Yang, Xu

AU - Qiao, Liang

PY - 2021/6

Y1 - 2021/6

N2 - In this brief, a novel differential-mode (DM) interference propagation mathematical modeling method based on parasitic inductive coupling theory for SiC wirebond multichip power module (SWMPM) with adjacent decoupling capacitor is proposed. Based on the proposed model, the strong and weak inductive coupling theory of DM interference equivalent circuit is proposed. And the influence of different position of decoupling capacitors on DM equivalent current is mathematically analyzed. A custom-made 1.2kV 160A power module based on DM interference optimized layout is built. It is compared with a commercial SiC power module, which can verify the feasibility and validity of the theoretical analysis.

AB - In this brief, a novel differential-mode (DM) interference propagation mathematical modeling method based on parasitic inductive coupling theory for SiC wirebond multichip power module (SWMPM) with adjacent decoupling capacitor is proposed. Based on the proposed model, the strong and weak inductive coupling theory of DM interference equivalent circuit is proposed. And the influence of different position of decoupling capacitors on DM equivalent current is mathematically analyzed. A custom-made 1.2kV 160A power module based on DM interference optimized layout is built. It is compared with a commercial SiC power module, which can verify the feasibility and validity of the theoretical analysis.

KW - EMI

KW - SiC MOSFET

KW - decoupling capacitors

KW - differential-mode interference

KW - inductive coupling

KW - mathematical modeling

KW - parallel-connected

UR - https://www.scopus.com/pages/publications/85097441759

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DO - 10.1109/TCSII.2020.3041675

M3 - 文章

AN - SCOPUS:85097441759

SN - 1549-7747

VL - 68

SP - 2077

EP - 2081

JO - IEEE Transactions on Circuits and Systems II: Express Briefs

JF - IEEE Transactions on Circuits and Systems II: Express Briefs

IS - 6

M1 - 9274371

ER -

DM Interference Propagation Mathematical Modeling in SiC Wirebond Multichip Power Module

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