摘要
The dielectric properties of CaCu3Ti4O12 ceramics fabricated with nano-size fine powders (~30 nm) are compared with that fabricated with micro-size coarse powders (0.1-0.3 μm). For the same sintering conditions, the ceramic samples with nano-size fine powders have more uniform and denser microstructures and higher room temperature dielectric constant (~105, in the frequency range of 10-1-10 5 Hz) than that with micro-size coarse powders. That the use of nano powders facilitates the formation of Cu-rich amorphous phase in the grain boundary led to an increasing dielectric loss in low frequency range. Besides the common intrinsic defect structure of V O + and V O ++, the energy level of ~0.72 eV detected in high temperature range is attributed to the conduction relaxations, and the energy level of 0.30-0.40 eV which is only detected in the sample synthesized by common submicron powders is suggested to originate from the defect level of grain boundary related to Cu ions. This research provides a technical guidance for the application of this material.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 1842-1847 |
| 页数 | 6 |
| 期刊 | Journal of Materials Science: Materials in Electronics |
| 卷 | 25 |
| 期 | 4 |
| DOI | |
| 出版状态 | 已出版 - 4月 2014 |
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