Development and Electrical Characteristics Study of a 10kV/125A SiC MOSFET Module

To address the needs of new power systems with large-scale integration of renewable energy sources, this paper independently developed a high-voltage silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module rated for 10 kV/125 A and investigated its electrical characteristics. First, the overall packaging structure and internal circuitry of the module were designed in detail. Subsequently, a 3D steady-state thermal finite element simulation model of the SiC MOSFET module was established in COMSOL Multiphysics to analyze its thermal performance under a constant baseplate temperature of 60°C. Additionally, ANSYS Q3D Extractor was employed to extract parasitic inductance parameters from the designed module's power loop. Simulation results revealed that the highest junction temperature occurred in the SiC MOSFET chip, reaching 123.35°C,which confirms that the existing packaging materials and structure meet the maximum allowable junction temperature requirements. The extracted parasitic inductance of the power loop was measured as = 26.1nH. The low parasitic inductance of the developed module facilitates the superior high-frequency switching performance inherent to SiC devices. This study provides critical technical support for the development and engineering application of high-voltage SiC MOSFET power modules.