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Design of SiC MOSFET medium voltage bipolar DC-DC converter based on buck structure

  • Zuoyu Wei
  • , Kefan Yu
  • , Dongxin Zhang
  • , Xiaoping Sun
  • , Yuguo Li
  • , Feng Wang
  • , Fang Zhuo
  • , Hao Yi
  • Xi'an Jiaotong University

科研成果: 书/报告/会议事项章节会议稿件同行评审

4 引用 (Scopus)

摘要

Medium Voltage (MV) DC-DC converters are now widely used in DC power supply and distributed generation systems [1]. This paper proposes a new Non-isolated MV DC-DC bipolar converter topology based on the buck circuit structure. The new topology can replace traditional isolated DC-DC topologies to some extent, such as dual active bridgesDABin DC bipolar distribution system. This can greatly reduce the cost of the system and the difficulty of control. Wide bandgap devices Silicon carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are used to replace traditional silicon-based MOSFETs or IGBTs in the experimental prototype. At the same time, high-inductor-current ripple method is used to reduce overall losses and further increase the power density of the converter. Finally, the correctness of this control strategy and the feasibility of this topology are verified by simulation.

源语言英语
主期刊名PEDG 2019 - 2019 IEEE 10th International Symposium on Power Electronics for Distributed Generation Systems
出版商Institute of Electrical and Electronics Engineers Inc.
684-687
页数4
ISBN(电子版)9781728124551
DOI
出版状态已出版 - 6月 2019
活动10th IEEE International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2019 - Xi'an, 中国
期限: 3 6月 20196 6月 2019

出版系列

姓名PEDG 2019 - 2019 IEEE 10th International Symposium on Power Electronics for Distributed Generation Systems

会议

会议10th IEEE International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2019
国家/地区中国
Xi'an
时期3/06/196/06/19

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