TY - GEN
T1 - Design of A Dual-Band SIW Antenna Array
AU - Liu, Wendong
AU - Yan, Sen
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/8/29
Y1 - 2020/8/29
N2 - In this letter, a differential-fed dual-band substrate integrated waveguide (SIW) antenna array is proposed for 5G communication. By employing the shoring pins and slots on the SIW element radiators, the TM-{110} and TM-{210} modes are combined in the lower band, while the TM-{310} mode is used in the upper band. Then a 1 \times 4 array is used to increase the gain. Due to the excellent electromagnetic shielding ability of the SIW structure, the coupling between the element antennas is much lower compared to traditional patch antennas, which can improve the beam scanning capability. The simulated results show that the realized gain is higher than 10.2 dBi in the lower band and 12.6 dBi in the upper band, and the beam scanning angles of the array are ±41° and ±25° in the lower and higher band, respectively. The proposed SIW antenna array has the advantages of low profile, high isolation and relatively high gain, which is a competitive candidate for 5G applications.
AB - In this letter, a differential-fed dual-band substrate integrated waveguide (SIW) antenna array is proposed for 5G communication. By employing the shoring pins and slots on the SIW element radiators, the TM-{110} and TM-{210} modes are combined in the lower band, while the TM-{310} mode is used in the upper band. Then a 1 \times 4 array is used to increase the gain. Due to the excellent electromagnetic shielding ability of the SIW structure, the coupling between the element antennas is much lower compared to traditional patch antennas, which can improve the beam scanning capability. The simulated results show that the realized gain is higher than 10.2 dBi in the lower band and 12.6 dBi in the upper band, and the beam scanning angles of the array are ±41° and ±25° in the lower and higher band, respectively. The proposed SIW antenna array has the advantages of low profile, high isolation and relatively high gain, which is a competitive candidate for 5G applications.
UR - https://www.scopus.com/pages/publications/85099433911
U2 - 10.1109/UCMMT49983.2020.9296098
DO - 10.1109/UCMMT49983.2020.9296098
M3 - 会议稿件
AN - SCOPUS:85099433911
T3 - 2020 13th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies, UCMMT 2020 - Proceedings
BT - 2020 13th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies, UCMMT 2020 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 13th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies, UCMMT 2020
Y2 - 29 August 2020 through 1 September 2020
ER -