@inproceedings{bd42a333da5440fa9157c7ebc0f497de,
title = "Dark-current of field-assisted GaAs semiconductor photocathodes",
abstract = "The dark-current of GaAs field-assisted photocathodes with red and near infrared response is larger than that of common GaAs photocathodes. The major source of dark-current of the photocathodes is impact ionization of hot holes in high field depletion region. In this paper, a model and creating mechanism of impact ionization in the photocathodes is described in detail, and a specific expression of the dark-current of the photocathodes at different operation conditions can be predicted once the appropriate parameters have been determined. It may be helpful to design a field-assisted photocathode and choose an optimum operation condition.",
author = "Jinmin Li and Lihui Guo and Xun Hou",
year = "1990",
language = "英语",
isbn = "0819402737",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Publ by Int Soc for Optical Engineering",
pages = "43--45",
editor = "Da-Heng Wang",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
note = "International Conference on Optoelectronic Science and Engineering '90 ; Conference date: 22-08-1990 Through 25-08-1990",
}